Organic–inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin-film field-effect transistors

Wu, Yuxiang; Li, Juan; Xu, Jian; Du, Yangyang; Huang, Like; Ni, Jian; Cai, Hongkun

doi:10.1039/c5ra24154e

Cited by 65 publications

(52 citation statements)

References 41 publications

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“…In addition to low‐temperature operation, there have been other solutions to mitigate the gate‐screening influence, such as improving the structural quality of the films, optimizing TFT configuration, electrode contact, and operation mode, and modifying MHP stoichiometry and components. Wu et al developed a N 2 ‐flow methylammonium iodide (MAI)‐vapor‐assisted solution process for fully covered and smooth MAPbI 3 channel layer preparation and achieved the record high μ e of 396.2 cm 2 V −1 s −1 . Sirringhaus's group showed that through the optimization of the film microstructure and source–drain contact modifications, it is possible to significantly minimize the instability and hysteresis in TFT characteristics, and they demonstrated a μ e of 0.5 cm 2 V −1 s −1 at RT in TG‐BC MAPbI 3 TFTs with Cytop as the dielectric and polyethylenimine ethoxylated (PEIE) as the interlayer modifying gold electrodes' work function (Figure b,c) .…”

Section: Solution‐processed Metal Halide Perovskite Transistorsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

165

130

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Studies on printable semiconductors and technologies have increased rapidly over recent decades, pioneering novel applications in many fields, such as energy, sensing, logic circuits, and information displays. The newest display technologies are already turning to metal oxide semiconductors, i.e., indium gallium zinc oxide, for the improvements needed to drive active matrix organic light-emitting diodes. Convenience and portability will be realized with flexible and wearable displays in the future. This report summarizes recent progress on the development of solution-processed thin film transistors, especially those deposited at low temperatures for next-generation flexible smart displays. The first part provides an overview on the history and current status of displays. Then, recent advances in state-of-the-art solution-processed transistors based on different semiconductors are presented, including metal oxides, organic materials, perovskites, and carbon nanotubes. Finally, conclusions are drawn and the remaining challenges and future perspectives are discussed. a large common cathode (opaque metal). This means that the light emission goes through the backplane and the TFT arrays are able to block the light, resulting in the reduced emission fill factor of the display. This mode is also called bottom emission. One effective way to avoid the light obstruction from TFTs in the backplane is to use top-emitting OLEDs, which have a transparent cathode. [2] In 2004, Pennsylvania State University demonstrated the first flexible phosphorescent AMOLED display with hydrogenated amorphous silicon on a 4 in. polyimide (PI) substrate. [7] One year later, a 48 × 48 organic pentacene TFT-driven AMOLED display on a polyethylene terephthalate (PET) substrate was reported by the same group. [8] In 2005, by employing a top-emission structure, researchers at Sony Corp. demonstrated the first full-color imaging on a flexible AMOLED with a pixel resolution of 80 ppi. [9] In 2013, Samsung Electronics showed curved OLED TVs for the first time. Two years later, the same company unveiled a smartphone with a curved edge display (Galaxy S6 Edge), which used touch sensors to improve the user interface and device design. Most recently, LG Display succeeded in developing the world's first large-size 77 in. transparent and flexible OLED display, which could be rolled up to a radius of 80 mm. [10] The ideal flexible AMOLED backplane should be robust, rollable/bendable, capable of complementary metal oxide semiconductor (CMOS) operation, and should lend itself to low-cost manufacturing. To advance toward next-generation flexible AMOLED displays, two key technological goals should be satisfied during fabrication. One is to develop TFT backplanes with good uniformity, stability, and electrical performance. Amorphous silicon (a-Si) TFTs are well known for their uniform electrical characteristics (µ FE < 1 cm 2 V −1 s −1 and I on /I off > 10 6 ) and have achieved great success in flat-panel LCD displays. However, the relatively low µ FE and the lig...

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Section: Solution‐processed Metal Halide Perovskite Transistorsmentioning

confidence: 99%

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Zhu

Shin

Liu

et al. 2019

Adv Funct Materials

165

130

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“…While in some studies, e.g. [24,25], high mobility higher than 1 cm 2 Vs −1 has been reported, in some other studies the mobility was found to be weak, when the device was tested at room temperature [26,28], no field-induced transport was observed [11], or the source-drain current was low and the output characteristics were independent of the gate voltage [24]. Table 1 summarizes the electronic characteristics of some perovskite FETs obtained from recent works.…”

Section: Perovskite Fetmentioning

confidence: 99%

“…A high performance perovskite FET should have a fully-covered perovskite channel with low density of grain boundaries (large grains) and effective contacts between the grains, to minimize trap sites and to enhance the charge carrier mobility and lifetime [11,24]. The aforementioned characteristics of a perovskite film is directly affected by the deposition method [25]. Application of spin coating commonly results in a deweted film with poor coverage.…”

Section: Introductionmentioning

confidence: 99%

“…The as-spun FET device, fabricated using such method, exhibited leakage-dominant characteristics with poor performance [11]. In order to control the solvent evaporation rate and crystal growth, and achieve a smooth, high performance and dense perovskite film, several treatments have been employed, such as anti-solvent dripping during the singlestep deposition [26,27] and gas blowing over PbI 2 or optimization of precursors concentration in the sequential approach [25,28,29]. Although the reported techniques have shown satisfactory outcome [25,26,28,30], all of them were performed on perovskites deposited on SiO 2 dielectric substrates, which is an inorganic material.…”

Section: Introductionmentioning

confidence: 99%

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Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors

Habibi

Eslamian

2018

J. Phys. Commun.

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Low-temperature solution-processed polymer and perovskite thin film field effect transistors (FETs) are attractive, as they are compatible with flexible and printed electronics. Given that chemical treatment of the FET channel is expensive and tedious, and sometimes damages the underneath (dielectric) solution-processed layers, in this work, two facile and scalable mechanical treatment techniques are proposed. In the case of polymer FET, the wet spun film was excited by ultrasonic vibration imposed on the substrate. It is demonstrated that the micromixing effect induced by the ultrasonic radiation results in disentanglement, reorganization, and recrystallization of the polymer chains in the wet film. Ultrasonic vibration also improves the film leveling and uniformity and enhances the charge mobility of the channel of the polymer FET. In the case of the perovskite FET, we found that nitrogen blowing over the spun sample of the perovskite solution is a facile, yet effective substitution for the conventional anti-solvent treatment, commonly used to control the solvent evaporation rate. By nitrogen blowing, we achieved a uniform film of perovskite deposited on a solution-processed dielectric layer with domain sizes up to several hundreds of nanometers. By applying these techniques, the linear charge mobility of 0.041 cm 2 Vs −1 and 0.055 cm 2 Vs −1 were obtained for polymer and perovskite FETs under illumination, respectively. It is shown that while the performance of the polymer FET is only slightly sensitive to illumination, the perovskite FET performs well only under illumination.

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“…As our previous work described [22], SEM and XRD measurements of PbI 2 layers fabricated by spin coating with different solution concentrations were taken.…”

Section: The Characteristics Of Pbi2 Layer Prepared By Different Procmentioning

confidence: 99%

The Influence of PbI2 on Characteristic of Organic-Inorganic Hybrid Perovskite Thin Films

Peng¹,

Wu²,

Tang³

et al. 2017

MNSMS

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Organic-inorganic hybrid perovskite materials have attracted significant research efforts because of their outstanding properties. Meanwhile the crystallization of organic-inorganic hybrid perovskite materials can significantly influence the films quality. Here, we research the influence of the characteristics of PbI 2 thin film on final perovskite films and the mechanisms of film formation based on the two-step sequential deposition method. We found that the characteristics of PbI 2 thin film, such as the grain size, the grain shape, the surface roughness and the film densification, have significant effects on the final perovskite films due to different film crystallization process. According to the analysis on the characteristics of the perovskite films obtained from different PbI 2 precursor, we suggested that the formation of perovskite film begins from the PbI 2 crystals expanding when they are converted to MAPbI 3 perovskite by migration of MA+ cations from the grain boundaries.

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Organic–inorganic hybrid CH₃NH₃PbI₃ perovskite materials as channels in thin-film field-effect transistors

Abstract: We proposed a new kind of TFT using organic–inorganic hybrid perovskite CH3NH3PbI3 material as the semiconducting channel.

Cited by 65 publications

References 41 publications

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors

The Influence of PbI<sub>2</sub> on Characteristic of Organic-Inorganic Hybrid Perovskite Thin Films

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Organic–inorganic hybrid CH3NH3PbI3 perovskite materials as channels in thin-film field-effect transistors

Abstract: We proposed a new kind of TFT using organic–inorganic hybrid perovskite CH3NH3PbI3 material as the semiconducting channel.

Cited by 65 publications

References 41 publications

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Printable Semiconductors for Backplane TFTs of Flexible OLED Displays

Facile and low-cost mechanical techniques for the fabrication of solution-processed polymer and perovskite thin film transistors

The Influence of PbI&lt;sub&gt;2&lt;/sub&gt; on Characteristic of Organic-Inorganic Hybrid Perovskite Thin Films

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Organic–inorganic hybrid CH₃NH₃PbI₃ perovskite materials as channels in thin-film field-effect transistors

The Influence of PbI<sub>2</sub> on Characteristic of Organic-Inorganic Hybrid Perovskite Thin Films