Organic-on-inorganic semiconductor contact barrier devices

Abstract

The organic compound 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) has previously been observed to undergo a large increase in conductivity on irradiation with energetic particle beams. In this letter, we describe the electrical characteristics of novel rectifying junctions employing unirradiated PTCDA vapor deposited onto 10-Ω cm p-Si substrates. The PTCDA-Si contact barrier has a height of φB = 0.74 eV. The resulting diodes undergo avalanche breakdown at VB = 230 V, and exhibit current densities at 1/2 VB of ⩽50 μA/cm2. In addition, the forward current-voltage (IF−V) characteristics are strongly dependent on the contact metal used on the top PTCDA surface. The best results obtained were for diodes employing Ti contacts which gave nonhysteretic, stable IF-V characteristics with an ideality factor of n = 1.7. Several properties of the as-deposited PTCDA are also discussed. The rectifying characteristics reported here, coupled with the properties of irradiated PTCDA, suggest many unique device applications.

Silicon Quantum Dots for Photovoltaics: A Review

“…First reports on silicon/organic hetero-junctions date back to 1982 (Forrest et al, 1982). At this time, devices were based on small organic molecules evaporated on crystalline silicon wafers.…”

Organic semiconductors for device applications: current trends and future prospects

“…In particular, the planar stacking of PTCDA molecules has attracted attention of various research groups [397][398][399][400][401][402][403][404].…”

Electronic parameters of MIS Schottky diodes with DNA biopolymer interlayer

“…Owing to their stability and barrier height (BH) enhancement properties, nonpolymeric organic compounds have been * E-mail: omergullu@gmail.com employed particularly in electronic devices [11,[17][18][19]. Forrest et al [17,20] and Antohe et al [21] obtained metal-insulator-semiconductor (MIS) contacts by sublimation of nonpolymeric organic thin films on a semiconductor substrate and subsequent evaporation of different metals. Afterwards, they measured the ideality factor and the BH.…”

“…The greatest feature of organic materials is that they can be tuned chemically, in order to adjust separately the band gap, valence and conduction band energies, charge transport as well as the solubility or other structural properties [16]. Owing to their stability and barrier height (BH) enhancement properties, nonpolymeric organic compounds have been * E-mail: omergullu@gmail.com employed particularly in electronic devices [11,[17][18][19]. Forrest et al [17,20] and Antohe et al [21] obtained metal-insulator-semiconductor (MIS) contacts by sublimation of nonpolymeric organic thin films on a semiconductor substrate and subsequent evaporation of different metals.…”