Organic phototransistor behavior and light-accelerated bias stress

Debucquoy, Maarten; Verlaak, Stijn; Stoedel, Soeren; Myny, Kris; Genoe, Jan; Heremans, Paul

doi:10.1117/12.734157

Cited by 4 publications

(6 citation statements)

References 14 publications

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“…It should be noted that the electrons are trapped in the shallow/deep traps of the charge storage layer and stored in the OH − and H + residues and oxygen vacancies in the charge-trapping layer. [37][38][39] The enhancement of the memory window in the UV-only NVM device shows that short-term UV treatment increases the number of oxygen vacancies in high-K materials and improves their charge-trapping function. 40 In contrast, the memory window was reduced in the UV +RTA sample, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Kim

Cho

et al. 2021

ECS J. Solid State Sci. Technol.

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The improvement in the charge storage characteristics in a non-volatile memory (NVM) device employing an ultraviolet (UV)-treated hafnium oxide (HfO2) layer as the charge-trapping layer is reported. X-ray photoelectron spectroscopy analysis was performed to characterize the Hf 4f and O 1s peaks. The defect densities corresponding to Hf and O after short-term UV treatment are 24.74% and 14.16%, respectively. The electrical characteristics, such as the interface trap density (Dit), dielectric constant, and flat band voltage (VFB), of single HfO2 thin films were determined via capacitance vs voltage (C–V) measurements of the fabricated metal–oxide–semiconductor (MOS) capacitors. Notably, this memory device has a maximum ΔVth of 4.10 V at 15 V, which corresponds to a 33.4% improvement in memory storage characteristics compared to those of an as-deposited HfO2 thin film-based memory. In addition, the charge retention after 10 years is 80.22%, which is superior to that of the as-deposited case. These results demonstrate the possibility of realizing high-efficiency TFT NVM devices using high-K materials, and are expected to enable further research on semiconductor devices using high-K materials as well as next-generation memory semiconductors using UV treatment.

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Section: Resultsmentioning

confidence: 99%

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Kim

Cho

et al. 2021

ECS J. Solid State Sci. Technol.

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“…Once the Ta 2 O 5 /pentacene interface forms, the electron trapping sites play a key role in the device performance. Our recent research based on Ta 2 O 5 and Zan’s group and Debucquoy’s group has demonstrated that the interface between the semiconductor and the gate dielectric has a great effect on OPTM performance. ,, UV/ozone treatment is a facile method to tune the properties of Ta 2 O 5 and the interface states. It is meaningful for the understanding of the possible mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Multifunctional Organic Phototransistor-based Nonvolatile Memory Achieved by UV/Ozone Treatment of the Ta₂O₅ Gate Dielectric

Liu

Zhao

Dong

et al. 2014

ACS Appl. Mater. Interfaces

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An organic phototransistor (OPT) shows nonvolatile memory effect due to its novel optical writing and electrical erasing processes. In this work, we utilize an organic light-emitting diode (OLED) as the light source to investigate OPT-based memory (OPTM) performance. It is found that the OPTM can be used as either flash memory or write-once read-many-times memory by adjusting the properties of the Ta2O5 gate dielectric layer. UV/ozone treatment is applied to effectively change dielectric properties of the Ta2O5 film. The mechanisms for this are examined by X-ray photoelectron spectroscopy and capacitance-voltage measurement. It turns out that the densities of oxygen vacancies and defects in the first 1.8 nm Ta2O5 films near the Ta2O5/semiconductor interface are reduced. Furthermore, for the first time, we use this multifunctional OPTM, which unites the photosensitive and memory properties in one single device, as an optical feedback system to tune the brightness of the OLED. Our study suggests that these OPTMs have potential applications in tuning the brightness uniformity, improving the display quality and prolonging the lifetime of flat panel displays.

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“…In previous studies, the threshold voltage shift and hysteresis were usually observed under illumination. These influences can be attributed to electron trapping in the interface between gate dielectric and active layer [1,2,3]. Using the different interfacial trap densities of devices obtained from different gate dielectric treatments, electron trapping in the interface was demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Organic Photo Transistors with Drain Bias Modulation Effect

Zan

Kao

2008

ECS Trans.

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In this paper, the influence of light induced electrons on the threshold voltage shift of organic thin film transistors (OTFTs) was studied. The light induced electrons are formed and accumulated in the channel near the interface of gate dielectric. The light source can be used as second source. Therefore, the study demonstrates the light induced electrons in channel can be affected by drain bias like bias stress. The decreasing accumulated electrons with increasing positive drain bias lower the threshold voltage shift rate during illumination time. The opposite trend can be observed when using negative drain increases accumulated electrons. This result is helpful to adjust the photosensivity of organic photo transistors.

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Organic phototransistor behavior and light-accelerated bias stress

Cited by 4 publications

References 14 publications

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Multifunctional Organic Phototransistor-based Nonvolatile Memory Achieved by UV/Ozone Treatment of the Ta₂O₅ Gate Dielectric

Organic Photo Transistors with Drain Bias Modulation Effect

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Organic phototransistor behavior and light-accelerated bias stress

Cited by 4 publications

References 14 publications

Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment

Analysis of HfO2 Charge Trapping Layer Characteristics After UV Treatment

Multifunctional Organic Phototransistor-based Nonvolatile Memory Achieved by UV/Ozone Treatment of the Ta2O5 Gate Dielectric

Organic Photo Transistors with Drain Bias Modulation Effect

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Product

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Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Analysis of HfO₂ Charge Trapping Layer Characteristics After UV Treatment

Multifunctional Organic Phototransistor-based Nonvolatile Memory Achieved by UV/Ozone Treatment of the Ta₂O₅ Gate Dielectric