Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Jang, Hyun‐Jun; Richter, Curt A.

doi:10.1002/adma.201602739

Cited by 76 publications

(89 citation statements)

References 111 publications

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“…In a recent comprehensive study based on spin-resolved photoemission, experimental evidence was provided to show that the presence of highly spin-polarized HISs is a very general phenomenon that does not even require the presence of π electrons in the isolated molecule, or a fully occupied majority d band in the 3d ferromagnet (strong ferromagnetism) 46 . Together with molecules evaporated in ultrahigh-vacuum conditions, significant work has also been developed on the use of different self-assembled monolayers on ferromagnetic materials, offering a perspective of molecular hybridization in an environment closer to established industrial processes such as inkjet printing and roll-to-roll coating [47][48][49][50] .…”

Section: The Molecular Sidementioning

confidence: 99%

Activating the molecular spinterface

2017

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The miniaturization trend in the semiconductor industry has led to the understanding that interfacial properties are crucial for device behaviour. Spintronics has not been alien to this trend, and phenomena such as preferential spin tunnelling, the spin-to-charge conversion due to the Rashba-Edelstein effect and the spin-momentum locking at the surface of topological insulators have arisen mainly from emergent interfacial properties, rather than the bulk of the constituent materials. In this Perspective we explore inorganic/molecular interfaces by looking closely at both sides of the interface. We describe recent developments and discuss the interface as an ideal platform for creating new spin effects. Finally, we outline possible technologies that can be generated thanks to the unique active tunability of molecular spinterfaces.

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Section: The Molecular Sidementioning

confidence: 99%

Activating the molecular spinterface

2017

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“…

recombination in organic light-emitting diodes and organic magnetoresistance (MR) devices. [13][14][15][16][17][18][19][20] The most common prototype organic device using spin freedom is organic spin valves (OSVs), [5,11,[21][22][23][24][25] which consist of a nonmagnetic spacer sandwiched between two ferromagnetic (FM) electrodes, and based on the alignment of the electron spin relative to the FM layer magnetization orientation. [13][14][15][16][17][18][19][20] The most common prototype organic device using spin freedom is organic spin valves (OSVs), [5,11,[21][22][23][24][25] which consist of a nonmagnetic spacer sandwiched between two ferromagnetic (FM) electrodes, and based on the alignment of the electron spin relative to the FM layer magnetization orientation.

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mentioning

confidence: 99%

Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers

Zheng

Feng

Gao

et al. 2019

Adv Elect Materials

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recombination in organic light-emitting diodes and organic magnetoresistance (MR) devices. [9][10][11][12] Moreover, organic semiconductors have obvious advantages, lower cost, and better flexibility, and they have greater possibility in wearable and large area applications. [13][14][15][16][17][18][19][20] The most common prototype organic device using spin freedom is organic spin valves (OSVs), [5,11,[21][22][23][24][25] which consist of a nonmagnetic spacer sandwiched between two ferromagnetic (FM) electrodes, and based on the alignment of the electron spin relative to the FM layer magnetization orientation. In this research field, there are tunneling and diffusive regimes. [26] The tunneling regimes occur in relatively thinner spacers (<15 nm), and the mode is weakly dependent on temperature. The diffusive regimes are also called hoping in organic spintronics. This mode occurs in relatively thicker layers (≥15 nm), and it is strongly dependent on temperature. In addition, the present study lies in the diffusive regime owing of the conductivity mismatch problem and more abundant phenomena like Hanle effect in organic spintronics. For organic semiconductor, both spin-orbit interaction and the hyperfine interaction play very significant parts in determining the spin relaxation, but the origin of determining the spin relaxation in organic semiconductors is still unknown. Herein, OSV effect is characterized by the MR ratios, defined as MR = (R ap − R p )/R p , where R ap and R p denote the resistance in the antiparallel and parallel states of FM electrode magnetization direction, respectively. There are lots of efforts to explore organic spintronics Organic materials are proposed to be excellent spin transport layers due to their weak hyperfine and spin-orbit coupling interaction. Donor−acceptortype polymers PTDCNTVT-420 and PTDCNTVT-320 with diketopyrrolopyrrole (DPP) units are employed as the spacers in the organic spin valves, which have more advantages such as solution processing, higher mobility, and large area fabrication. The performance of polymers spin valves based on DPP units with different alkyl side chain lengths are studied. The different top ferromagnetic (FM) electrodes Co and Ni 80 Fe 20 are used for spin detection resulting in obvious distinct magnetoresistance (MR) values. The MR ratio of approaching 30% at 10 K is achieved with the Ni 80 Fe 20 electrodes using PTDCNTVT-420 with longer alkyl side chain lengths. Moreover, the MR behaviors are observed depending on various temperatures, which are related with the FM electrodes spin injection efficiency. The direct spinterface are also investigated by transmission electron microscopy (TEM) and atomic force microscopy (AFM). In addition, the series of results indicate that the PTDCNTVT polymers can be used as good spin transport model materials and give clues for future polymers spintronic studies.

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“…However, these technologies rely on the non-trivial, efficient coupling between an organic material and a ferromagnetic electrode, such as Fe or Co. Common ferromagnetic metals are d-block elements that have multiple oxidation states and many stable oxide structures. Controlling the interface to realize new spin effects in organic materials remains an opportunity for molecular monolayers (6) (7). Self-assembled monolayers offer a means to not only passivate the ferromagnetic surface but can also be used to control the oxide thickness (8), tune the electronic band alignment, and impart interfacial spin polarization (9).…”

Section: Designer Interfacesmentioning

confidence: 99%

(Invited) Interface Engineering for Nanoelectronics

2017

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Innovation in the electronics industry is tied to interface engineering as devices increasingly incorporate new materials and shrink. Molecular layers offer a versatile means of tuning interfacial electronic, chemical, physical, and magnetic properties enabled by a wide variety of molecules available. This paper will describe three instances where we manipulate molecular interfaces with a specific focus on the nanometer scale characterization and the impact on the resulting performance. The three primary themes include, 1-designer interfaces, 2-electronic junction formation, and 3-advancing metrology for nanoelectronics. We show the ability to engineer interfaces through a variety of techniques and demonstrate the impact on technologies such as molecular memory and spin injection for organic electronics. Underpinning the successful modification of interfaces is the ability to accurately characterize the chemical and electronic properties and we will highlight some measurement advances key to our understanding of the interface engineering for nanoelectronics.

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Organic Spin‐Valves and Beyond: Spin Injection and Transport in Organic Semiconductors and the Effect of Interfacial Engineering

Cited by 76 publications

References 111 publications

Activating the molecular spinterface

Activating the molecular spinterface

Magnetoresistance and Spinterface of Organic Spin Valves Based on Diketopyrrolopyrrole Polymers

(Invited) Interface Engineering for Nanoelectronics

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