Organic spin valves with nonvolatile memory using molecular doping

Room-temperature magnetoresistance in Ni78Fe22/C8-BTBT/Ni78Fe22 nanojunctions fabricated from magnetic thin-film edges using a novel technique

“…Although high-mobility molecules could have large spin coherent lengths, low-mobility molecules, such as Alq 3 and bathocuproine (BCP) ($10 −5 to 10 −6 cm 2 V −1 s −1 ), [28][29][30] are usually used in spintronic devices. 1,2,4,8,11,12,15,17 By contrast, recent studies have reported that high-mobility molecules, such as P(NDI2OD-T2) ($0.2-0.85 cm 2 V −1 s −1 ) 31 and PTDCNTVT-320 ($0.8-1.46 cm 2 V −1 s −1 ), 32 can be used in OSVs. 6,9,14 Thus, C8-BTBT could be potentially applicable to high-performance molecular spintronic devices.…”

“…Typical molecular spintronic devices are organic spin valves (OSVs) which consist of organic molecules sandwiched between two magnetic layers. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] These types of devices show a large magnetoresistance (MR) effect. The resistance of such devices changes according to the conguration of the magnetization vectors in both magnetic layers adjacent to the molecular layer.…”