Organic thin-film transistor compact model with accurate charge carrier mobility

Maiti, T. K.; Hayashi, T.; Chen, L.; Miura-Mattausch, Mitiko; Mattausch, H. J.

doi:10.1109/sispad.2014.6931581

Cited by 5 publications

(5 citation statements)

References 14 publications

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“…In this model, a physical compact charge carrier mobility model for OTFTs based on an analysis of the bias-dependent Fermi-energy movement in the band gap is reported. Carrier transport through localised trap states in the band gap is described by a hopping mobility model as a function of surface potential, and the band-like carrier transport in extended energy states is modelled by the PF field-effect mechanism [44][45][46]. The previously reported models did not take into consideration the carrier transport in the band gap of OSCs.…”

Section: Otft Compact Model Developed By Maiti Et Almentioning

confidence: 99%

“…In UOTFT model, mobility has power‐law relation with channel charge from (32), whereas channel charge relation with gate–source voltage is stated in (31). In Maiti's model [44], mobility is a function of (

E_{F} - E_{LUMO}

) that is a function of

V_{GS}

as shown in equations from (23)–(27), as shown in Fig. 15; Maiti's mobility increases exponentially with gate–source voltage and saturates.…”

Section: Analysis Of the Reported Modelsmentioning

confidence: 99%

“…A mobility expression, which depends on gate voltage, is empirically deduced from a numerical estimation of the simultaneous change in the barrier height, free carrier density, and trapped carrier density [41][42][43]. A physical compact charge carrier mobility model for OTFTs relied on the bias-dependent Fermienergy movement in the band gap is developed by Maiti et al [44]; they utilised hopping mobility model as a function of surface potential to reproduce the carrier transport through localised trap states located in the band gap and the Poole-Frenkel (PF) field-effect mechanism to characterise the band-like carrier transport mechanism in extended energy states [45,46]. The universal OTFT (UOTFT) model, applied in Silvaco SmartSpice, is an OTFT compact model that extends the power mobility law from the percolation theory for VRH carrier transport, to the subthreshold operation region [47][48][49].…”

Section: Introductionmentioning

confidence: 99%

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OTFTs compact models: analysis, comparison, and insights

Fayez

Morsi

Sabry

2017

IET Circuits, Devices & Systems

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It is challenging to develop a physically based compact model for an organic thin-film transistor (OTFT). Moreover, there is still a lack of a universal model that would cover the huge variety of materials and device structures available for stateof-the-art OTFTs. Different models of charge transport phenomenon in organic semiconductors are briefly explained, since such phenomenon constitutes the basis of a physically based compact model of an OTFT. An introduction to the basic principles dictated on compact models suitable for Computer Aided Design (CAD) simulators is stated. Six reported models are presented and analysed with an emphasis on their primary assumptions and applicability aspects. Furthermore, the selected compact models are compared with experimental results provided by a fabricated OTFT. Finally, the authors conclude recommendations for advancing OTFT compact modelling in order to reach a more enhanced model that could characterise most recently reported OTFTs.

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Section: Otft Compact Model Developed By Maiti Et Almentioning

confidence: 99%

E_{F} - E_{LUMO}

) that is a function of

V_{GS}

as shown in equations from (23)–(27), as shown in Fig. 15; Maiti's mobility increases exponentially with gate–source voltage and saturates.…”

Section: Analysis Of the Reported Modelsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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OTFTs compact models: analysis, comparison, and insights

Fayez

Morsi

Sabry

2017

IET Circuits, Devices & Systems

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“…The observed device features are analyzed by applying the compact model HiSIM-Organic, [14][15][16][17][18] which has been developed on the basis of the bandgap theory. Namely, carrier dynamics in organic MOSFETs are modeled by induced electric fields within the device by applied voltages, similar to inorganic crystalline MOSFETs.…”

Section: Device Modeling Conceptmentioning

confidence: 99%

Analysis of printed organic MOSFET characteristics with a focus on the temperature dependence

Zenitani

Maiti

Hayashi

et al. 2016

Jpn. J. Appl. Phys.

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An experimental and theoretical investigation of the device characteristics of printed organic MOSFETs with a focus on the temperature dependence is reported. In particular, an anomalous behavior of the temperature dependence of the I ds–V gs characteristic is observed, which is found to be increased at higher temperature in MOSFETs fabricated with the printing technology. Our analysis suggests that the temperature dependence of the trap density and the carrier transport mechanism are the causes for this anomalous increase at higher temperature. The results obtained with the compact model HiSIM-Organic, developed based on the physics of carrier dynamics in organic materials, confirm these conclusions. Improving stable characteristics in circuit applications are demonstrated to be achievable at higher temperatures, due to these anomalous properties of organic MOSFETs fabricated by applying the printing technology.

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“…Horowitz et al [6] and Servati et al [7] explained the relationship between mobility and temperature based on the multiple trap and release (MTR) in organic semiconductors. Maiti et al [8]- [10] summarized several carrier transport mechanisms and developed a physical-based compact mobility model as a function of surface potential. However, it did not study the temperature characteristic of OTFTs.…”

Section: Introductionmentioning

confidence: 99%

A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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Based on the device physics, a mobility model for organic thin-film transistors (OTFTs) is presented considering temperature and contact resistance. As a function of the surface potential, the mobility model including hopping mechanism is able to explain the dependence of temperature and gate bias. The contact resistance is also considered in order to extract the correct mobility. Furthermore, with the assumption that the trapped carrier concentration dominates Poisson's equation, and combining the mobility model, a DC compact model accounting for contact resistance and temperature is proposed suitable for the temperature scaling from 83 to 295K. Through the extensive comparisons between the model results and the numerical iteration or experimental data, the validity of the mobility and current models is strongly supported. INDEX TERMS Mobility model, organic thin-film transistors, temperature, contact resistance, hopping, DC model.

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Organic thin-film transistor compact model with accurate charge carrier mobility

Cited by 5 publications

References 14 publications

OTFTs compact models: analysis, comparison, and insights

OTFTs compact models: analysis, comparison, and insights

Analysis of printed organic MOSFET characteristics with a focus on the temperature dependence

A Mobility Model Considering Temperature and Contact Resistance in Organic Thin-Film Transistors

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