Organometallic Chemical Vapor Deposition Growth of Heterostructure of Wide Band Gap and Transparent Boron Phosphide on Silicon

Abstract

A boron phosphide (BP) layer was grown on the (111) Si substrate by atmospheric pressure organometallic chemical vapor deposition (MOCVD) using triethylboran ((C 2 H 5 ) 3 B) and phosphine (PH 3 ) sources. By transmission electron diffraction analysis, the transparent BP layer was found to grow on (111) Si with the following orientation: (111),h110i-Si//(111),h110i-BP. The MOCVD-grown BP layers exhibited transparency under fluorescent light illumination. Reflected light color was observed to vary depending on the thickness of the BP layer. The refractive index (n) of the heteroepitaxial (111) BP layer was revealed to decrease from 3.16 at a wavelength () of 350 nm to 2.77 at of 750 nm. The extinction coefficient (k) corresponding to n at of 350 nm was 0.19. Refractive index (n) and k at of 350 nm gave 9.95 as the real part of the complex dielectric constant of the MOCVD-grown BP layer. The optical evaluation indicated that BP is applicable as a transparent III-V semiconductor layer for forming heteroepitaxial structures with Si.

Boron phosphide films by reactive sputtering: Searching for a p-type transparent conductor

“…Absorption coefficients of single crystals and single-crystalline films 13,14,20 are generally below 1 × 10 3 cm −1 at 2.5 eV, in line with computational predictions. Yet, a more recent measurement on a BP thin film 24 shows a substantially higher absorption coefficient, above 1 × 10 4 cm −1 in most of the visible region. Furthermore, BP films on transparent substrates are usually described as orange, 21 red, 12 brown, 13 or black, 25 indicating that their optical transmission may not be sufficiently high.…”

“…The computed absorption coefficient using a hybrid exchange correlation functional and electron-phonon coupling is shown. 15 Two previously measured absorption coefficients for BP films 13,24 phases (Fig. 3(b)), so their optical characterization is not reliable.…”

Radio‐frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero‐structure

“…A 2-inch BP/Si (001) substrate was prepared by Showa Denko K.K. [19]. Prior to loading into MBE system, BP/Si (001) was treatment as follows: 1) a 10-min ultrasonic clearing with acetone; 2) a 5-min rinse in deionized (DI) water; 3) a 1-min dip into a 0.5 % HF aqueous solution; 4) a 5-min rinse in DI water.…”

Ultraviolet Mie resonances in computationally discovered boron phosphide nanoparticles

“…32,33 Refractive index measurements of BP thin films have also been conducted but with varying results. 34,35 The RPA@PBE permittivities used for the initial screening are qualitatively accurate but suffer from underestimated band gaps and missing excitonic effects. To determine the refractive index of BP with quantitative accuracy, we solve the Bethe-Salpeter equation (BSE) to obtain the permittivity using single-particle transition energies obtained from a G 0 W 0 band structure calculation.…”