Organometallic chemical vapour deposition of cobalt/indium thin films using the single-molecule precursors [(CO)4Co]aInR3-a (R = CH2CH2CH2NMe2; a = 1–3)

The single-source approach to processing materials as thin films by metal±organic chemical vapor deposition (MOCVD) started with pioneering works in the late 1970s and early 1980s, and has developed considerably during the late 1980s and the 1990s. The literature contains some review and feature articles dedicated to its application to various types of materials, the most recent ones appearing in the mid 1990s. The present review aims at putting together results obtained for very different materials so as to obtain a comparative view of the different approaches. Faced with the considerable amount of data accumulated over more than twenty years, the scope of this article will be deliberately and arbitrarily limited to those compounds mentioned in the title. Materials consisting of elements from the second row of the periodic table, or binary combinations including one element from the second row, will not be considered here. This article will refer to precursors that have actually been used in MOCVD processes, rather than potential MOCVD sources.

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“…The films are polyphasic, the only crystallographically identified phases in the Co±In phase diagram being CoIn 2 and CoIn 3 . [195] …”

Section: Indium-containing Compoundsmentioning

confidence: 99%

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Gleizes

2000

Chem. Vap. Deposition

129

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“…An example for this group of substances is the vapor pressure of the CoIn system (Scheme 10), which at ). [171] In comparison to this halide-containing complexes of the types K, O, or P are less volatile and, furthermore, as a source of impurities of the films the halide group is unwelcome. The analysis of the deposited films and exhaust gases revealed that the metal composition of the precursors in the deposited films is not necessarily reproduced.…”

Section: Precursor For Mocvd Of Intermetallic Phasesmentioning

confidence: 99%

“…Co 1 In 1 films deposited from [(CO) 4 CoÀIn(R N ) 2 ] display reflections which have to be assigned to these phases. [171] The phase diagrams of other interesting alloys such as Mn/Al, Mn/Ga, Co/Al, Fe/Ga, Ni/Ga, and Ni/In are more complex, the homogeneity area is more narrow. Thus it is very difficult to get single-phase films.…”

mentioning

confidence: 99%

Coordination Chemistry of Aluminum, Gallium, and Indium at Transition Metals

Fischer

Weiß

1999

Angew. Chem. Int. Ed.

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208

101

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The current upswing in the interest in organoelement chemistry of Group 13 metals is attributed not least to the establishment of the coordination chemistry of R(a)E fragments (E=Al, Ga, In; a=1, 2) at d-block metals (M). Recently the availability of low-valent organoelement compounds as building blocks for synthesis has substantially enriched the structure chemistry of this class of compounds. The M-E bonding conditions and the question of the significance of M(d(pi))-E(p(pi)) backbonding as well as potential applications in materials science, for example, as single-source precursors for the deposition of thin intermetallic films by chemical vapor deposition, are discussed.

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“…[Co 2 (CO) 8 ] durch CO-Substitution erhalten wurden, belegen diese Methode eindrucksvoll und lassen weitere interessante Ergebnisse erwarten. [171,172] …”

Section: Bimolekulare Additionsreaktionen Von Alkyl-erdmetallverbinduunclassified

“…[164] Prototypisch hierfür ist das System Co/Ga auf GaAs: Das ternäre Co-Ga-As-Phasendiagram [ 20 8C etwa 0.020(5) mbar beträgt und Schichtwachstumsraten um 1 mm h À1 ermöglicht (10 s À1 ). [171] Halogenidhaltige Komplexe der Typen K, O oder P dagegen sind schwerer flüchtig, und auûerdem ist der Halogenidrest als Quelle von Verunreinigungen der Schichten unerwünscht. Die Analyse der abgeschiedenen Filme und der Abgase ergab, daû die Metallzusammensetzung der Vorstufen in den abgeschiedenen Filmen nicht grundsätzlich reproduziert wird.…”

Section: Precursor Für Mocvd Intermetallischer Phasenunclassified

Koordinationschemie von Aluminium, Gallium und Indium an Übergangsmetallen

Fischer

Weiß

1999

Angewandte Chemie

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Der aktuelle Aufschwung der elementorganischen Chemie der Metalle der 13. Gruppe (Erdmetalle) ist nicht zuletzt auf die Etablierung der Koordinationschemie von RaE‐Fragmenten (E=Al, Ga, In; a=1, 2) an d‐Metallen (M) zurückzuführen. In jüngster Zeit bereicherte die Verfügbarkeit niedervalenter Organoelementverbindungen als Synthesebausteine die Strukturchemie dieser Substanzklasse beträchtlich. Diskutiert werden die M‐E‐Bindungsverhältnisse und die Frage nach der Bedeutung von M(dπ)‐E(pπ)‐Rückbindungen sowie potentielle materialwissenschaftliche Anwendungmöglichkeiten, z. B. als Einkomponentenquellen für die Abscheidung dünner intermetallischer Filme nach dem Verfahren der Chemischen Dampfabscheidung.

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Organometallic chemical vapour deposition of cobalt/indium thin films using the single-molecule precursors [(CO)4Co]aInR3-a (R = CH2CH2CH2NMe2; a = 1–3)

Cited by 12 publications

References 15 publications

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

MOCVD of Chalcogenides, Pnictides, and Heterometallic Compounds from Single-Source Molecule Precursors

Coordination Chemistry of Aluminum, Gallium, and Indium at Transition Metals

Koordinationschemie von Aluminium, Gallium und Indium an Übergangsmetallen

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