Organometallic vapor phase epitaxial growth of AlSb-based alloys

Wang, C.A.

doi:10.1016/s0022-0248(96)00579-9

Cited by 38 publications

(36 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Both diethyltellurium [41] and tetraethyltin [43] were used as successful n-type doping sources and n-AlGaAsSb epilayers were grown over the entire Al alloy range. The electron concentration ranged from about 1 x 10 16 to 6 x 10 17 cm -3 ; it decreased as the Al content increased because of the higher C levels [40].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 97%

“…Reducing C impurities in AlSb-containing alloys has been a major focus and alternative Al precursors such as triisobutylaluminum [39], tritertiarybutylaluminum (TTBAl) [13,15,19,22,24,[40][41][42] Currently, the most suitable combination of precursors for OMVPE growth of AlSbcontaining materials is either TTBAl or DMEAAl with TMSb or TESb. However, the best combination certainly depends on the reactor configuration and gas handling system.…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…Reducing C impurities in AlSb-containing alloys has been a major focus and alternative Al precursors such as triisobutylaluminum [39], tritertiarybutylaluminum (TTBAl) [13,15,19,22,24,[40][41][42], triethylaluminum [16] trimethylamine alane (TMAAl) or dimethylamine alane (DMEAAl) [20,22,24,43,44] [24]. However, O levels were reported to be dependent on the batch of organometallic precursors [19,24,46].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…An important breakthrough for AlSb-containing epilayers was the ability to the dope the alloys n-type [40,41,43], and the demonstration of electrically pumped p-n diode lasers [40][41][42]47]. Both diethyltellurium [41] and tetraethyltin [43] were used as successful n-type doping sources and n-AlGaAsSb epilayers were grown over the entire Al alloy range.…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…Diethyltellurium (DETe) and dimethylzinc (DMZn) were used as the n-and p-type doping sources, respectively. Although not explicitly discussed in section 2.2, TBAs is preferable over AsH 3 since it has a lower pyrolysis temperature [7,18,19,24,40,46,60,73]. It was found that alloy uniformity and reproducibility was better with TBAs than AsH 3 .…”

mentioning

confidence: 99%

See 4 more Smart Citations

Progress and Continuing Challenges in GaSb-based III-V Alloys and Heterostructures Grown by Organometallic Vapor Phase Epitaxy

2004

View full text Add to dashboard Cite

This paper discusses progress in the preparation of mid-IR GaSb-based III-V materials grown by organometallic vapor phase epitaxy (OMVPE). The growth of these materials is complex, and fundamental and practical issues associated with their growth are outlined. Approaches that have been explored to further improve the properties and performance are briefly reviewed.Recent materials and device results on GaInAsSb bulk layers and GaInAsSb/AlGaAsSb heterostructures, grown lattice matched to GaSb, are presented. State-of-the-art GaInAsSb materials and thermophotovoltaic devices have been achieved. This progress establishes the high potential of OMVPE for mid-IR GaSb-based devices. 2 IntroductionGaSb-based III-V semiconductor alloys are attractive for optoelectronic devices such as midinfrared lasers, detectors, and thermophotovoltaics (TPVs); and electronic devices such as highspeed transistors and resonant-tunneling diodes [1]. Alloys of particular interest are based on the binaries GaSb, AlSb, InSb, GaAs, AlAs, and InAs. As shown in Fig. 1 GaSb-based heterostructures have been successfully grown by all of the major epitaxial techniques, including liquid phase epitaxy, molecular beam epitaxy (MBE), and organometallic vapor phase epitaxy (OMVPE). While each of these technologies must contend with numerous challenges that are specific to the method of choice, several fundamental issues related to Sbcontaining III-V alloys exist. These include the low volatility of Sb compared to P-and Asbased alloys, which necessitates stringent control of V/III ratio; the requirement to use low growth temperatures (450 to 600 °C); the existence of a large solid phase miscibility gap for many Sb-containing alloys; and the affinity of AlSb-based alloys to incorporate O and C. As a consequence, growth of Sb-based alloys differs significantly from the more conventional As-and P-based materials, which certainly has made the development of the GaSb-based materials and devices very challenging.This paper discusses both the fundamental and practical issues associated with the growth of mid-IR GaSb-based III-V alloys grown by OMVPE, and briefly reviews approaches that have been explored to further improve the properties and performance of bulk layers as well as heterostructures. Growth considerations include the importance of suitable organometallic precursors and control of V/III ratio; miscibility gaps in ternary and quaternary alloys; C and O contamination in AlSb-based alloys; in-situ monitoring; GaSb substrate quality and preparation;and heterostructure growth. Recent materials and device results are limited to GaInAsSb and 3 AlGaAsSb alloys grown lattice matched to GaSb, since two comprehensive reviews on OMVPE growth of Sb-based materials were recently published [5,6]. Growth considerations and brief review of previous work Fundamental differences between Sb-based and P-or As-based III-V alloysOne of the early premises of OMVPE growth of III-V semiconductors was the utilization of precursors based on group III organometallics a...

show abstract

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 97%

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%

“…Reducing C impurities in AlSb-containing alloys has been a major focus and alternative Al precursors such as triisobutylaluminum [39], tritertiarybutylaluminum (TTBAl) [13,15,19,22,24,[40][41][42], triethylaluminum [16] trimethylamine alane (TMAAl) or dimethylamine alane (DMEAAl) [20,22,24,43,44] [24]. However, O levels were reported to be dependent on the batch of organometallic precursors [19,24,46].…”

Section: Carbon Incorporation In Alsb-containing Alloysmentioning

confidence: 99%