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ALD NiO was deposited on silicon and glass substrates by applying alternative pulses of Ni(amd) (AccuDEP TM Ni, Dow Chemical), and water. The film deposition rate at 200°C was 0.25-0.45 Å/cycle. The material properties of the NiO films were characterized using FESEM, AFM, UV-Vis-NIR spectrometer, and GIXRD. An ultrathin (~3-4 nm) film of the optimized ALD NiO was applied to very thin (500nm) CdTe cells in order to evaluate the potential of the ALD NiO film as a HT-EBL layer. The ALD NiO integrated CdTe cells enhanced Voc and FF, and offered 15% improvement in PCE compared with the control cells.