Designing novel organogermanium OMVPE precursors for high-purity germanium films

Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE

“…These XPS results are consistent with prior secondary ion mass spectrometry (SIMS) results of no carbon in Ge/SiGe/Si films grown using MOVPE and IBGe as Ge source. These results are achieved during the collaborative development work [1,2] by Rohm and Haas Electronic Materials LLC, USA, and CNRS-LPN, France, the details of which are described in the next section.…”

“…Strategic use of graded SiGe buffer layers has effectively surmounted the tribulations associated with significant mismatch in lattice constants of direct band-gap III-V semiconductors (particularly GaAs) and silicon. These achievements have thus triggered new potential opportunities of complete single-chip optoelectronic integration of high-speed Si and/or SiGe processors with high bandwidth III-V lasers, for the most part using the same metalorganic vapor-phase epitaxy (MOVPE) reactor to afford highly reliable and economical solid-state semiconducting lasers [1,2]. In unison to this evolution, strained silicon (e-Si) has also been acknowledged as the prime candidate for next generation complementary metal-oxide-semiconductor (CMOS) field effect transistor (FET) technology.…”

Heteroepitaxial Growth of GaAs/Ge Buffer Layer on Si for Metamorphic InGaAs Lasers

“…When we use a conventional MOVPE reactor, sometimes it is difficult to introduce monogermane (GeH 4 ) widely used in CVD system as a Ge precursor since GeH 4 is a self-decomposable and explosive material. There are some reports on using metal-organic Ge precursors such as tert-butyl germane [20] and iso-butyl germane (IBGe) [21]- [23]; these materials can be easily introduced into MOVPE systems. We used IBGe as a precursor to fabricate Ge buffer layers and conventional precursors (TEGa, TMIn, and AsH 3 ) for III-V compound semiconductors.…”

Memory effect of Ge in III–V semiconductors

“…There are several possible reasons for this memory effect: Ge deposition on the reactor walls, Ge deposition inside the gas delivery and exhaust system, or simply, diffusion of Ge within the structure. Specifically, iso-butyl germane (IBGe) with its high vapor pressure [2] has the tendency to show a strong memory effect. Ge on the reactor walls can re-evaporate at the growth temperature and be incorporated into the layers grown.…”