Accurate vapor pressure equation for trimethylindium in OMVPE

Shenai-Khatkhate, Deodatta V.; DiCarlo, Ronald L.; Ware, Robert A.

doi:10.1016/j.jcrysgro.2007.11.196

Cited by 27 publications

(10 citation statements)

References 6 publications

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“…A precursor gas mixture of 15% phosphine (PH 3 ) in hydrogen (H 2 ) and trimethylindium (TMIn, In(CH 3 ) 3 ) vapor was introduced into the reactor. TMIn sublimes at room temperature allowed its vapor to be entrained in an argon carrier gas stream [ 13 ]. Additional argon is used to sustain the plasma and dilute the precursors.…”

Section: Methodsmentioning

confidence: 99%

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

et al. 2011

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Indium phosphide nanocrystals (InP NCs) with diameters ranging from 2 to 5 nm were synthesized with a scalable, flow-through, nonthermal plasma process at a rate ranging from 10 to 40 mg/h. The NC size is controlled through the plasma operating parameters, with the residence time of the gas in the plasma region strongly influencing the NC size. The NC size distribution is narrow with the standard deviation being less than 20% of the mean NC size. Zinc sulfide (ZnS) shells were grown around the plasma-synthesized InP NCs in a liquid phase reaction. Photoluminescence with quantum yields as high as 15% were observed for the InP/ZnS core-shell NCs.

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Section: Methodsmentioning

confidence: 99%

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

et al. 2011

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“…Argon was flowed through the TMI and/or TMG bubblers, which are temperature controlled with a thermoelectric cooler and resistive heater. The bubbler pressure was controlled to deliver a combined trimethylmetal flow rate of 0.05 mmol/min, following vapor pressure curves from literature for TMI 22 and TMG. 23 The molar ratio of PH 3 to M(CH 3 ) 3 is above 4:1 in all cases, as a lower excess of PH 3 causes In 0 metal film formation on the reactor walls.…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Morphological Control of In_xGa_1–xP Nanocrystals Synthesized in a Nonthermal Plasma

et al. 2018

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We explore the growth of In x Ga 1−x P nanocrystals (x = 1, InP; x = 0, GaP; and 1 > x > 0, alloys) in a nonthermal plasma. By tuning the reactor conditions, we gain control over the morphology of the final product, producing either 10 nm diameter hollow nanocrystals or smaller 3 nm solid nanocrystals. We observe the gas-phase chemistry in the plasma reactor using plasma emission spectroscopy to understand the growth mechanism of the hollow versus solid morphology. We also connect this plasma chemistry to the subsequent native surface chemistry of the nanocrystals, which is dominated by the presence of both dative-and lattice-bound phosphine species. The dative phosphines react readily with oleylamine in an L-type ligand exchange reaction, evolving phosphines and allowing the particles to be dispersed in nonpolar solvents. Subsequent treatment by HF causes the solid InP 1.5 and In 0.5 Ga 0.5 P 1.3 to become photoluminescent, whereas the hollow particles remain nonemissive.

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“…Among the various precursors, TMIn has several advantages, including a simple chemical structure and a high vapor pressure (∼1.7 Torr at room temperature) . In addition, TMIn is one of the most utilized commercial precursors and has been extensively studied for CVD and ALD of various In-compounds. − Despite these advantages, there have been no accomplishments with respect to self-limiting ALD-In 2 O 3 using the TMIn precursor.…”

Section: Introductionmentioning

confidence: 99%

Self-Limiting Film Growth of Transparent Conducting In₂O₃ by Atomic Layer Deposition using Trimethylindium and Water Vapor

et al. 2011

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Accurate vapor pressure equation for trimethylindium in OMVPE

Cited by 27 publications

References 6 publications

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Morphological Control of In_xGa_1–xP Nanocrystals Synthesized in a Nonthermal Plasma

Self-Limiting Film Growth of Transparent Conducting In₂O₃ by Atomic Layer Deposition using Trimethylindium and Water Vapor

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Accurate vapor pressure equation for trimethylindium in OMVPE

Cited by 27 publications

References 6 publications

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Combined plasma gas-phase synthesis and colloidal processing of InP/ZnS core/shell nanocrystals

Morphological Control of InxGa1–xP Nanocrystals Synthesized in a Nonthermal Plasma

Self-Limiting Film Growth of Transparent Conducting In2O3 by Atomic Layer Deposition using Trimethylindium and Water Vapor

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Product

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Morphological Control of In_xGa_1–xP Nanocrystals Synthesized in a Nonthermal Plasma

Self-Limiting Film Growth of Transparent Conducting In₂O₃ by Atomic Layer Deposition using Trimethylindium and Water Vapor