Self-Limiting Film Growth of Transparent Conducting In₂O₃ by Atomic Layer Deposition using Trimethylindium and Water Vapor

Atomic layer deposition of highly conductive indium oxide using a liquid precursor and water oxidant

“…The carrier concentration of the In 2 O 3 film in the present work is approximately 1.2 Â 10 21 cm À 3 and the electron Hall mobility is about 13.1 cm 2 /Vs. This mobility is lower than those reported in previous In 2 O 3 films, while the carrier concentration is slightly higher [7,10,19,21,33]. The Hall mobility is likely to decrease owing to the scattering between the free carriers [34].…”

“…The use of InCl 3 precursor required excessively high deposition temperatures ($ 500 1C), resulting in low growth rate (o0.3 Å/cycle) [15,16]. Also, In(acac) 3 [17] and Trimethyl In [18,19] precursors resulted in low growth rates (o0.4 Å/cycle) and high resistivity (3 Â 10 À 2 Ω cm) films. When InCp is used as the precursor, relatively high growth rates may be achieved (1.3 Å/cycle) [20][21][22], however strong oxidants such as ozone are needed in order to obtain oxide films, otherwise H 2 O and O 2 must be injected simultaneously to stimulate the precursor oxidation.…”

Spatial Atmospheric Atomic Layer Deposition of InxGayZnzO for Thin Film Transistors

“…25 Similar results are reported for ALD InZnO grown from supercycles of ZnO and In 2 O 3 binary oxides. 21,22 For the deposition conditions reported in this paper, In-atoms are incorporated in ZnO, but they are not available as active surface sites for consecutive film growth. In-atoms can disrupt the local growth of ZnO crystals, inducing a transition to an amorphous phase at a much lower In-content than reported for sputtering or conventional ALD.…”

Indium oxide thin film prepared by low temperature atomic layer deposition using liquid precursors and ozone oxidant

“…However, most of the reported studies were based on solid In precursors, which exhibit relatively low vapor pressure and reproducibility although some of them readily volatilize with mild heating. [15][16][17] In addition, precursors such as InCl 3 , indium acetylacetonate [In(acac) 3 ] 15 and trimethylindium (TMIn) require relatively high deposition temperatures and result in slow ALD growth rates 18,19 and high electrical resistivity (>10 -3 Ω·cm). 17,20,21 The use of cyclopentadienylindium (InCp) precursor resulted in relatively fast ALD growth (1.3 Å/cycle), but the deposition temperatures were still relatively high (200~300 °C) [22][23][24] .…”