Orientation dependence and asymmetry of subthreshold characteristics in CMOSFETs

Improvement of current drivability in high‐scalable tunnel field‐effect transistors with CMOS compatible self‐aligned process

“…The second strategy for higher I on is to change channel orientation from 〈100〉 to 〈110〉. There are several theoretical and experimental studies on crystal orientation effects on gate-induced drain leakage (GIDL) [9][10][11][12][13]. They consistently show 〈110〉 channel gives ∼10× larger GIDL than 〈100〉 channel, since the former has smaller effective masses in terms of both light-hole and heavy-electron [10,13].…”