The transformation of high-frequency vibrations of piezoelectric elements into continuous linear motion of a slider is one of the main tasks of a linear piezoelectric motor. To produce a high thrust force in the piezoelectric linear actuator, we proposed the compound piezoelectric linear actuator based on a ''shaking beam'' excited by two sources of longitudinal mechanical vibrations shifted by =2. The compound actuator consists of two shaking beams and is rigidly fastened. The finite element method (FEM) was used to define structural and electrical boundary conditions for the compound piezoelectric actuator. FEM analysis showed that the compound actuator's trajectory was elliptical. Experimental research has shown that the compound piezoelectric actuator has high thrust force.

In order to overcome the small current drivability of a tunneling field-effect transistor (TFET), we have introduced a TFET with the SiGe body and elevated Si drain region. The proposed TFET features large on-current and lower subthreshold swing (SS) compared with the Si TFET. Also, by using elevated Si drain region, it is expected that ambipolar current can be suppressed. Through the technology computer aided design (TCAD) simulation, the characteristics of the proposed TFET have been investigated to confirm its superiority in performance. The proposed TFET structure enables self-aligned doping process and has a strong immunity to short-channel effects compared with the conventional TFET. In addition, we have confirmed that both n-and p-channel characteristics can be simultaneously improved by using the proposed TFET.

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