Orientation dependence of fatigue behavior in relaxor ferroelectric–PbTiO3 thin films

Bornand, V.; Trolier-McKinstry, Susan; Takemura, Koichi; Randall, Clive A.

doi:10.1063/1.372442

Cited by 63 publications

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“…Hence it is important to understand the intrinsic fatigue behavior of each polarization switching path in BiFeO 3 thin fi lms. In this communication, we report polarization fatigue in BiFeO 3 that depends on switching path, and propose a fatigue model which will broaden our understanding of the fatigue phenomenon in low-symmetry materials.Previously, there were reports on fatigue characteristics of rhombohedral ferroelectrics: ferroelastic domain evolution with polarization fatigue in textured fi lms [ 12 , 13 ] and ceramics [ 14 , 15 ] of PZN-PT, and orientation dependence showing (111)-oriented samples are more easily fatigued than (001)-oriented ones in PZN-PT [16][17][18] and BiFeO 3 . [ 19 ] In order to study the intrinsic behavior of switching-path dependent fatigue, it is crucial (1) to control a single polarization switching path among the three possible ones (71 ° , 109 ° and 180 ° ) during switching cycles [ 20 , 21 ] and (2) to remove the extrinsic effects of the pre-existing domain or grain boundaries affecting polarization switching.…”

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confidence: 99%

The Nature of Polarization Fatigue in BiFeO₃

et al. 2011

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As a room-temperature multiferroic, BiFeO 3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. [1][2][3] BiFeO 3 , having a rhombohedral unit cell, has antiferromagnetic, ferroelectric and ferroelastic order parameters. Since BiFeO 3 exhibits coupling between spontaneous electric polarization in the [111] direction and the (111) antiferromagnetic planes, control of the magnetic order can be achieved by ferroelectric domain reorientation resulting from polarization switching by an external electric fi eld. [ 4 ] This possibility of controlling the magnetism by an electric fi eld has been demonstrated at room temperature in single crystals [ 5 , 6 ] and thin fi lms. [ 4 , 7 ] In addition, BiFeO 3 has the largest remanent polarization ( P r ∼ 100 μ C cm − 2 ) along the [111] polar direction among all known ferroelectrics, [1][2][3] which is a promising feature as a lead-free material for ferroelectric random access memory (FeRAM). Utilizing the large remanent polarization of BiFeO 3 would enable further reduction of the cell size limited by conventional ferroelectrics such as BaTiO 3 and Pb(Zr,Ti)O 3 .Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric fi eld. [1][2][3][4][5][6][7] Due to the rhombohedral symmetry of BiFeO 3 , there are four ferroelastic variances and three different polarization switching events: (1) 71 ° switching from r1 − to r3 + , (2) 109 ° switching from r1 − to r2 + (or r4 + ), and (3) 180 o switching from r1 − to r1 + (the superscript + and -stand for up and down polarization, respectively). Each switching path is coupled to a different reorientation of the BiFeO 3 unit cell, and hence different coupling to the magnetic order [ 4 ] as well as different magnitudes of switchable polarization. [ 8 , 9 ] A degradation of the ferroelectric properties of BiFeO 3 will result in losing controllability of magnetic order switching in magnetoelectric devices and capacity for information storage in ferroelectric memory devices. Especially, polarization fatigue [ 10 , 11 ] will directly restrict the reliability of the actual devices. Hence it is important to understand the intrinsic fatigue behavior of each polarization switching path in BiFeO 3 thin fi lms. In this communication, we report polarization fatigue in BiFeO 3 that depends on switching path, and propose a fatigue model which will broaden our understanding of the fatigue phenomenon in low-symmetry materials.Previously, there were reports on fatigue characteristics of rhombohedral ferroelectrics: ferroelastic domain evolution with polarization fatigue in textured fi lms [ 12 , 13 ] and ceramics [ 14 , 15 ] of PZN-PT, and orientation dependence showing (111)-oriented samples are more easily fatigued than (001)-oriented ones in PZN-PT [16][17][18] and BiFeO 3 . [ 19 ] In order to study the intrinsic behavior of switching-path dependent fatigue, it is crucial (1) to control a single polarization sw...

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The Nature of Polarization Fatigue in BiFeO₃

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“…Here, triangular instead of rectangular pulses are applied to the sample, thereby allowing for time-resolved subtraction of the non-switching components. 73 Analysis of the data in panel (b) provides values of P s ≈ 8 μC cm -2 , P r ≈ 7 μC cm -2 , and E c ≈ 245 kV cm -1 . The factor of ~4 difference in P s and P r between the dynamic and remanent P-E data indicates that the KLE-templated PZT films suffer from comparably large parasitic capacitances and leakage currents.…”

Section: Resultsmentioning

confidence: 99%

Ordered Mesoporous Thin Film Ferroelectrics of Biaxially Textured Lead Zirconate Titanate (PZT) by Chemical Solution Deposition

et al. 2014

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Lead zirconate titanate (PZT) thin film nanostructures with a high degree of biaxial texturing and good ferroelectric properties have been prepared by facile chemical solution deposition on (001)-oriented STO:Nb and LSMO/STO:Nb substrates using a poly(ethylene-co-butylene)-block-poly(ethylene oxide) diblock copolymer as structure-directing agent. The samples were thoroughly characterized by electron microscopy, synchrotron-based grazing incidence smallangle X-ray scattering, X-ray diffraction (including θ-2θ, ω, and φ scans), X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, and by ferroelectric polarization switching and fatigue measurements. We show that (1) the cubic mesostructured films with 16 nm diameter pores can be crystallized to produce single phase perovskite PZT with retention of nanoscale order, (2) the sol-gel derived material has an in-plane texture of ~1.9° and an out-ofplane texture of ~1.5°, and (3) the top surface is Zr-rich (the composition in the interior of the films is closer to the targeted composition of PbZr 0.52 Ti 0.48 O 3 ). The coercive field and remanent polarization of approx. 100 nm-thick films derived from dynamic P-E experiments are ~250 kV cm -1 and ~25 μC cm -2 (~7 μC cm -2 after subtracting the non-switching components). Despite the use of Au top electrodes, the nanocrystalline samples show reasonable fatigue performance.All these features render the mesoporous PZT thin films attractive, e.g., for producing straincoupled composite multiferroics.

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“…In this work, we carried out a comparative investigation of structural and ferroelectric properties of preferentially oriented PZT thin films on BPO buffer layers with different thicknesses (23,65, and 136 nm). The PZT/BPO heterostructure deposited on platinized silicon wafer is randomoriented.…”

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confidence: 99%

Electrical properties of (001)-textured Pb(Zr,Ti)O3 thin films with different BaPbO3 thicknesses

Liang

2006

Journal of Crystal Growth

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Orientation dependence of fatigue behavior in relaxor ferroelectric–PbTiO3 thin films

Cited by 63 publications

References 30 publications

The Nature of Polarization Fatigue in BiFeO₃

The Nature of Polarization Fatigue in BiFeO₃

Ordered Mesoporous Thin Film Ferroelectrics of Biaxially Textured Lead Zirconate Titanate (PZT) by Chemical Solution Deposition

Electrical properties of (001)-textured Pb(Zr,Ti)O3 thin films with different BaPbO3 thicknesses

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Orientation dependence of fatigue behavior in relaxor ferroelectric–PbTiO3 thin films

Cited by 63 publications

References 30 publications

The Nature of Polarization Fatigue in BiFeO3

The Nature of Polarization Fatigue in BiFeO3

Ordered Mesoporous Thin Film Ferroelectrics of Biaxially Textured Lead Zirconate Titanate (PZT) by Chemical Solution Deposition

Electrical properties of (001)-textured Pb(Zr,Ti)O3 thin films with different BaPbO3 thicknesses

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The Nature of Polarization Fatigue in BiFeO₃

The Nature of Polarization Fatigue in BiFeO₃