BaPbO 3 and Pb (Zr 0.40 Ti 0.60 )O 3 thin films were prepared by reactive sputtering on 150 mm platinized silicon substrates. Device structures were fabricated using NiCr top electrodes. The polarization fatigue of these capacitors stacks was investigated for up to 10 9 switching cycles. Polarization decays roughly as the logarithm of the number of polarization reversals. This fatigue behavior was attributed to the NiCr top electrode.