Polarization Fatigue of NiCr/PZT/BaPbO₃Capacitors on Platinized Silicon Wafers

Abstract

BaPbO 3 and Pb (Zr 0.40 Ti 0.60 )O 3 thin films were prepared by reactive sputtering on 150 mm platinized silicon substrates. Device structures were fabricated using NiCr top electrodes. The polarization fatigue of these capacitors stacks was investigated for up to 10 9 switching cycles. Polarization decays roughly as the logarithm of the number of polarization reversals. This fatigue behavior was attributed to the NiCr top electrode.

Pressure‐Induced Effects on BaPbO3: A Prospectively Valuable Material for Piezoelectric Applications via DFT

“…This suggests the potential of BaPbO 3 as a dependable conductive substrate in gamma irradiation environments. G. Suchaneek et al [ 22 ] found that both Pt/PZT/BaPbO 3 and NiCr/PZT/BaPbO 3 multilayer systems exhibited comparable patterns of fatigue, suggesting similar behavior under stress. The decline in polarization, a measure of the material's electric charge response, displayed a logarithmic connection with the frequency of polarization reversals.…”