Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates

Hsu, Hsu Cheng; Cheng, Ching Sheng; Chang, Chia Chieh; Yang, Song; Chang, Chen; Hsieh, Wen‐Pin

doi:10.1088/0957-4484/16/2/021

Cited by 117 publications

(65 citation statements)

References 23 publications

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“…Two prominent peaks at 330 and 436 cm À1 originate from the 2E 2 mode and nonpolar optical phonon mode (E 2 ), respectively. 24,25 The high intensity nonpolar The presence of oxygen decient nanowires because of Fe ion incorporation is also conrmed by the existence of corresponding vibration modes as indicated in the Fig. 2(b), which is consistent with earlier reported results.…”

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confidence: 90%

Probing luminescent Fe-doped ZnO nanowires for high-performance oxygen gas sensing application

et al. 2014

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Herein, we demonstrate the growth of Fe-doped ZnO nanowires using a typical vapour phase transport process for oxygen gas sensing application. The morphologies of these nanowires have been evaluated by high-resolution transmission electron microscopy, which confirms the formation of ZnO nanowires with 20-50 nm diameter and with a d-spacing of $0.270 nm, corresponding to (002) planes. The energy dispersive X-ray spectroscopy result reveals the presence of Fe, Zn and O elements in 9 wt% Fedoped ZnO nanowires. The Raman and photoluminescence spectroscopy results explore the oxygen deficient structure of these nanowires with Fe ion occupying tetrahedral sites in the ZnO lattice along with some interstitial Zn and Fe ions. Furthermore, these nanowires arrays illustrate a sensitivity of 23 and 31 with fast response/recovery times of about 38 s/46 s and 11 s/11 s at an operating temperatures of 100 C and 140 C, respectively. The obtained results established that these luminescent ZnO nanowires could be an excellent choice for high-performance oxygen gas sensing application.

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confidence: 90%

Probing luminescent Fe-doped ZnO nanowires for high-performance oxygen gas sensing application

et al. 2014

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“…This observation shows that the growth behaviour of the ZnO NWs on the Si substrate is quite different from that of the ZnO NWs on the GaN/sapphire substrate. The reason can be attributed to the large differences in their thermal expansion coefficients, lattice mismatch and difference in crystal structure cause a rather large stress between ZnO and Si substrate [24,25]. On the other hand, it was found that, due to higher rate of nucleation on the Si substrate, the surface density of nucleation centres was very high [26] and incompatibility of the lattice structure between the cubic Si substrate and the hexagonal ZnO.…”

Section: Resultsmentioning

confidence: 99%

High-quality ZnO nanowire arrays directly synthesized from Zn vapor deposition without catalyst

Khai¹,

Maneeratanasarn²,

Choi³

et al. 2011

Journal of the Korean Crystal Growth and Crystal Technology

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Vertically well-aligned ZnO nanowire (NW) arrays were synthesized directly on GaN/sapphire and Si substrate from Zn vapor deposition without catalysts. Experimental results showed that the number density, diameter, crystallinity and degree of the alignment of ZnO NWs depended strongly on both the substrate position and kind of the substrates used for the growth. The photoluminescence (PL) characteristics of the grown ZnO NW arrays exhibit a strong and sharp ultraviolet (UV) emission at 379 nm and a broad weak emission in the visible range, indicating that the obtained ZnO NWs have a high crystal quality with excellent optical properties. The as-grown ZnO NWs were characterized by using scanning electron microscopy (SEM), high resolution transmission electronic microscopy (HR-TEM), and X-ray diffraction (XRD).

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“…Peak of (100), (002), (101), (102) and (110) correspond to hexagonal ZnO wurtzite can be observed apparently (JCPDS No: 36-1451). Besides, peak of impurity corresponds to silicon was also appeared in between of plane (100) and (002), located at ~33.2° for all samples (JCPDS No: 17-0901) [21,22]. Fig.…”

Section: International Integrated Engineering Summit 2014mentioning

confidence: 99%

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

Eswar

Lepit²,

Rasmidi³

et al. 2015

AMM

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In this work, seeded porous silicon (PSi) was used as a substrate in the growth of ZnO nanostructures. PSi was prepared by electrochemical etching method. ZnO thin films as seeded were deposited via sol-gel spin coating method. ZnO nanostructures were grown on seeded PSi using hydrothermal immersion method. In order to study the effect of post-heat treatment on the substrate, post annealing temperature were varied in the range of 300 to 700 °C. The FESEM results shows ZnO thin film composed of nanoparticles were distributed over the PSi surface. Based on AFM characterization, the smoothest surface was produced at post annealing temperature of 500 °C. There are two different peaks appeared in PL characterization. The peak in near-UV range is belonging to ZnO thin films while a broad peak in visible range can be attributed to ZnO defects and PSi surface. In addition, FESEM, XRD and PL were used to characterize the ZnO nanostructures. The FESEM results revealed ZnO nano-flower were successfully grown on seeded PSi. Hexagonal wurtzite of ZnO with dominated by the plane (100), (002), and (101) was found by XRD characterization. Two different peaks in UV range and visible range can be attributed to ZnO nano-flower and various defects of ZnO, respectively.

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Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates

Cited by 117 publications

References 23 publications

Probing luminescent Fe-doped ZnO nanowires for high-performance oxygen gas sensing application

Probing luminescent Fe-doped ZnO nanowires for high-performance oxygen gas sensing application

High-quality ZnO nanowire arrays directly synthesized from Zn vapor deposition without catalyst

Seeded Porous Silicon Preparation as a Substrate in the Growth of ZnO Nanostructures

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