Orientation of Electron Spins in Semiconductors

Dyakonov, Michel; Zakharchenya, B. P.; Perel, V. I.; Safarov, S I; Fleisher, V.G.

doi:10.1070/pu1972v014n06abeh004824

Cited by 106 publications

(185 citation statements)

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“…3−5 In order to clarify the limitations and mechanisms for spin relaxation in monolayer graphene devices a lot of effort has been done by both experimentalists 3−9 and theoreticians 2,10−12 but up to now this topic is still under debate. Theoretical results pointed out that the D'Yakonov−Perel mechanism 13 and locally enhanced spin−orbit coupling due to impurities and lattice deformations 2,10 are the most probable mechanisms for spin relaxation for measurements in graphene spintronic devices. 2,11,12 Since all devices studied so far were fabricated on substrates (SiO 2 3−8 or SiC 14 ) in which the intrinsic properties of graphene are masked due to the electronic coupling to the substrate, 15 no previous study was able to confirm these recent theoretical predictions.…”

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confidence: 99%

Spin Transport in High-Quality Suspended Graphene Devices

et al. 2012

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confidence: 99%

Spin Transport in High-Quality Suspended Graphene Devices

et al. 2012

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“…The spin relaxation mechanism is best understood from the dependence of τ so with elastic scattering time τ (or µ ) where * / τ μ = m e :a linear relation indicates the Elliott-Yafet mechanism [ 32 ] and an inverse relation indicates D'yakonov and Perel' (Rashba) mechanism. [ 33 ] Figure 3 a shows the variation in τ so as a function of 1/ µ along the [001] and [1][2][3][4][5][6][7][8][9][10] for the 5 uc LAO sample. In both directions, there is an inverse relationship between τ so and µ , which implies a Rashba SOC at the interface.…”

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confidence: 99%

Gate Tunable In‐ and Out‐of‐Plane Spin–Orbit Coupling and Spin‐Splitting Anisotropy at LaAlO₃/SrTiO₃ (110) Interface

Gopinadhan

Annadi

Kim

et al. 2015

Adv Elect Materials

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materials has been actively investigated for magnetic memory applications (as this requires much smaller current densities compared to direct current switching of magnetic domains) and a strong SOC in a layer adjacent to the soft magnetic layer is key to switching in-plane [ 5 ] or perpendicular magnetization. [ 6 ] SOC in atoms is usually signifi cant only in high-Z elements because the interaction increases as the fourth power of the atomic number. However, disruption of the periodic boundary conditions in a solid, particularly broken inversion symmetry at surfaces and interfaces, also leads to SOC. The classic examples are interfaces of GaAs/GaAlAs [ 7 ] and InAs/InGaAs [ 8 ] and more recently LaAlO 3 / SrTiO 3 (100) (LAO/STO). [9][10][11] Recently, it has been shown that at the (001) surface of SrTiO 3, the Ti 3 d orbital subband is spinsplit by 90 meV with spins of opposite chirality, using spin-and angle-resolved photoemission spectroscopy. [ 12 ] A large perpendicular electric fi eld is expected at the LAO/ STO interface due to broken structural inversion symmetry, which might produce a Rashba SOC. In the Rashba effect, the conduction electrons of wave vector k moving in a potential gradient normal to the interface ( ∂V / ∂z ), experience an effective in-plane magnetic fi eld B so where 1The Rashba interaction is represented by the Rashba Hamilto-where σ is the Pauli spin matrix, ẑ is a unit vector normal to the interface and α is the SOC strength. , which is enormous compared to metallic systems and will be an ideal spin-polarized source. In addition to the in-plane effect, there is an unexpected gate-tunable out-of-plane SOC at the LaAlO 3 /SrTiO 3 (110) interface when the spins lie outof-plane due to broken symmetry in the plane of the interface. It is demonstrated that this can be manipulated by varying the LaAlO 3 thickness showing that this interface can be engineered for spin-orbit torque devices.

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“…Also, discrete and random modulations of the transition frequency arise when one studies 1/f -noise caused by random two-level fluctuators in superconducting qubits [162,163]. Closely related phenomena include the Dyakonov-Perel effect [164], the Dicke line narrowing of Doppler spectra [165], and the quantum Zeno effect [166]. The incoherent modulation of the transition energy between two discrete values can be modelled as a random-telegraph noise (RTN) created by a symmetric two-valued Poisson fluctuation process.…”

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Quantum systems under frequency modulation

et al. 2017

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Abstract. We review the physical phenomena that arise when quantum mechanical energy levels are modulated in time. The dynamics resulting from changes in the transition frequency is a problem studied since the early days of quantum mechanics. It has been of constant interest both experimentally and theoretically since, with the simple two-state model providing an inexhaustible source of novel concepts. When the transition frequency of a quantum system is modulated, several phenomena can be observed, such as Landau-Zener-Stückelberg-Majorana interference, motional averaging and narrowing, and the formation of dressed states with the presence of sidebands in the spectrum. Adiabatic changes result in the accumulation of geometric phases, which can be used to create topological states. In recent years, an exquisite experimental control in the time domain was gained through the parameters entering the Hamiltonian, and high-fidelity readout schemes allowed the state of the system to be monitored non-destructively. These developments were made in the field of quantum devices, especially in superconducting qubits, as a well as in atomic physics, in particular in ultracold gases. As a result of these advances, it became possible to demonstrate many of the fundamental effects that arise in a quantum system when its transition frequencies are modulated. The purpose of this review is to present some of these developments, from two-state atoms and harmonic oscillators to multilevel and many-particle systems.

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Orientation of Electron Spins in Semiconductors

Cited by 106 publications

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Spin Transport in High-Quality Suspended Graphene Devices

Spin Transport in High-Quality Suspended Graphene Devices

Gate Tunable In‐ and Out‐of‐Plane Spin–Orbit Coupling and Spin‐Splitting Anisotropy at LaAlO₃/SrTiO₃ (110) Interface

Quantum systems under frequency modulation

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Orientation of Electron Spins in Semiconductors

Cited by 106 publications

References 0 publications

Spin Transport in High-Quality Suspended Graphene Devices

Spin Transport in High-Quality Suspended Graphene Devices

Gate Tunable In‐ and Out‐of‐Plane Spin–Orbit Coupling and Spin‐Splitting Anisotropy at LaAlO3/SrTiO3 (110) Interface

Quantum systems under frequency modulation

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Gate Tunable In‐ and Out‐of‐Plane Spin–Orbit Coupling and Spin‐Splitting Anisotropy at LaAlO₃/SrTiO₃ (110) Interface