Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

Hasegawa, Hideki; Ohno, Hideo; Ishii, Hisayoshi; Haga, T.; Abe, Y.; Takahashi, Hiroshi

doi:10.1016/0169-4332(89)90087-1

Cited by 15 publications

(7 citation statements)

References 34 publications

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“…Improvement of the MIS interface is a central issue in order for III-V channels to be successfully implemented in future CMOS circuits. It is widely recognized that native oxides on III-V surfaces deteriorate the MIS interface properties [1,2], and many interface control methods have been proposed to remove or modify these oxides, such as surface passivation by wet oxide etching [3,4], sulfur passivation [5,6], plasma cleaning [7,8], nitridation [9,10], Si deposition [11,12], and atomic layer deposition (ALD) using reducing reactants [13,14]. Among these studies, the effects of Al 2 O 3 ALD on III-V surfaces have been investigated extensively [15,16].…”

Section: Introductionmentioning

confidence: 99%

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

et al. 2012

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Interface-formation processes in atomic layer deposition (ALD) of Al2O3 on InGaAs surfaces were investigated using on-line Auger electron spectroscopy. Al2O3 ALD was carried out by repeating a cycle of Al(CH3)3 (trimethylaluminum, TMA) adsorption and oxidation by H2O. The first two ALD cycles increased the Al KLL signal, whereas they did not increase the O KLL signal. Al2O3 bulk-film growth started from the third cycle. These observations indicated that the Al2O3/InGaAs interface was formed by reduction of the surface oxides with TMA. In order to investigate the effect of surface-oxide reduction on metal-insulator-semiconductor (MIS) properties, capacitors and field-effect transistors (FETs) were fabricated by changing the TMA dosage during the interface formation stage. The frequency dispersion of the capacitance-voltage characteristics was reduced by employing a high TMA dosage. The high TMA dosage, however, induced fixed negative charges at the MIS interface and degraded channel mobility.

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Section: Introductionmentioning

confidence: 99%

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

et al. 2012

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“…Hasegawa [9,10,78] noted the different shape of the CV plot for III-V oxide interfaces to those of Si-oxide interfaces. There have been a number of models for the cause of this difference, in terms of the defect density of states.…”

Section: Defect Gap Statesmentioning

confidence: 99%

“…At the same time, the native oxide of GaAs was known to be of low quality and to contain many defects [9][10][11]. The alternative is to use a non-native dielectric.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, there are rather few examples of good non-native dielectrics on semiconductors; silicon nitride on amorphous silicon being one of the few good cases. Hasegawa [9,10] tabulated the measured interface state densities (D it ) of various deposited dielectrics on GaAs, which showed that they possessed high D it values, as seen in Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

“…There were numerous efforts to characterise the interfaces, such as by photo-luminescence ( Fig. 3) and scanning tunnelling spectroscopy, compared to those formed by other oxides [10,[18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Robertson

Guo

Lin

2015

Journal of Applied Physics

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The paper describes the reasons for the greater difficulty in the passivation of interface defects of III-V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.

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Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO₂/AlGaN/GaN Structures

Nezu,

Maeda,

Baratov

et al. 2024

Physica Status Solidi (a)

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Effects of the ultrathin 1 nm thick AlGaN regrown layer before gate insulator deposition on the performance of ZrO2/AlGaN/GaN metal‐insulator‐semiconductor (MIS) structures are investigated. In comparison with the reference ZrO2/AlGaN/GaN MIS high‐electron‐mobility transistors (MIS‐HEMTs), MIS‐HEMTs with AlGaN regrown layer exhibit increased maximum drain current (>1050 mA mm−1) and broader full‐width at half maximum (FWHM) of transconductance profile (11 V). Moreover, the gate leakage current in the forward direction is reduced by about four orders of magnitude while the hysteresis of the transfer curves is cut‐down to more than 40%. Compared with the control MIS‐capacitors (MIS‐caps), MIS‐caps with regrowth show highly evident sudden increase in capacitance known as “spill‐over” in the capacitance–voltage (C–V) profiles, suggesting improved ZrO2/AlGaN interfaces. Extracted electron states from the C–V profiles, reveal 6 times to 14 times reduction of interface states density within 0.2 to 0.8 eV from the AlGaN conduction band edge. Using photo‐assisted C–V measurements, the near mid‐gap electron states density of MIS‐caps is extracted with regrowth to be at least three times less than those of reference MIS‐caps. Findings in this work are very similar to those recently reported Al2O3/regrown‐AlGaN interfaces, suggesting that the regrowth technique could be universal in reducing electron states along insulator/AlGaN interfaces.

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Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

Cited by 15 publications

References 34 publications

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO₂/AlGaN/GaN Structures

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Origin and properties of interface states at insulator-semiconductor and semiconductor-semiconductor interfaces of compound semiconductors

Cited by 15 publications

References 34 publications

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Initial Processes of Atomic Layer Deposition of Al2O3 on InGaAs: Interface Formation Mechanisms and Impact on Metal-Insulator-Semiconductor Device Performance

Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices

Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO2/AlGaN/GaN Structures

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Effect of Ultra‐Thin AlGaN Regrown Layer on the Electrical Properties of ZrO₂/AlGaN/GaN Structures