Ce3+‐doped Gd3Fe5O12 (Ce:GIG) film has a good application prospect in the field of integrated optical device. In this article, Ce:GIG and Ce,Ga:GIG films were deposited onto the quartz glass substrate by using radio‐frequency magnetron sputtering technology. The crystal phase, surface morphology, magnetization, and magnetic circular dichroism properties of films were characterized by using the X‐ray powder diffraction, atomic force microscopy, vibrating sample magnetometer, and circular dichroism spectrometer. The results show that as‐prepared Ce,Ga:GIG films has a good quality and show an excellent magneto‐optical performance, and the doping of Ga3+ ion and the annealing process have significant effect on the magnetism and magneto‐optical performances. It is expected that Ce,Ga:GIG film with a moderate Ga3+‐doping content is a better candidate than Ce:GIG and Ce:YIG films for the next generation of integrated optical isolator and other magneto‐optical equipment.