2007
DOI: 10.1016/j.susc.2007.06.075
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Origin of flat morphology and high crystallinity of ultrathin bismuth films

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Cited by 85 publications
(79 citation statements)
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“…A similar diffuse ring has previously been reported for Bi films on the fivefold surface of the icosahedral Al-Pd-Mn quasicrystalline or on the Si(111)-7 × 7 surface. 10,11,23 The intensity of this diffuse ring depends on the fraction of the surface covered with Bi(110) islands and their size. The fraction of Bi(110) islands is certainly smaller on the Al 13 Co 4 substrate compared to these systems, because they compete with the Bi(111) orientation already in the early stage of thin film growth.…”
Section: Multilayer Regime At 300 Kmentioning
confidence: 99%
“…A similar diffuse ring has previously been reported for Bi films on the fivefold surface of the icosahedral Al-Pd-Mn quasicrystalline or on the Si(111)-7 × 7 surface. 10,11,23 The intensity of this diffuse ring depends on the fraction of the surface covered with Bi(110) islands and their size. The fraction of Bi(110) islands is certainly smaller on the Al 13 Co 4 substrate compared to these systems, because they compete with the Bi(111) orientation already in the early stage of thin film growth.…”
Section: Multilayer Regime At 300 Kmentioning
confidence: 99%
“…Moiré patterns were previously observed for nanostructured bismuth films deposited on GaAs [15], Au [33], Si(111) [34], and quasicrystals [35]; however, no detailed investigation of the origin of these patterns was performed until now. We show here that moiré patterns are observed for 3 monolayer (ML) thick Bi islands on highly oriented pyrolytic graphite (HOPG) and investigate the morphological and electronic structure of these islands using STM and scanning tunneling spectroscopy (STS).…”
Section: Introductionmentioning
confidence: 98%
“…This choice of substrate is also very beneficial for practical applications, as the interface between film and insulating substrate, expected to reveal topological states, will also be protected from influencing oxidation effects arising from ambient exposure in technological applications [19]. The growth of Bi has been extensively studied on Si(111) [20][21][22][23][24][25][26][27][28][29] and HOPG [13,[30][31][32] as well as other surfaces [3,4,12,[33][34][35][36][37][38], resulting in fabrication of films with a range of different morphologies, orientations, and strain. The fabrication of Bi films has attracted considerable interest in recent years, as their controlled growth, with focus on morphology and crystallographic orientation, on semiconductor and oxide surfaces is not a trivial task.…”
Section: Introductionmentioning
confidence: 99%