2005
DOI: 10.1117/12.599239
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Origin of LER and its solution

Abstract: We have studied several factors having an effect on LER in terms of resist chemistry, resist process, CD-SEM metrology, numerical aperture and sigma settings ofthe exposure tool, and the mask pattern. LER is extracted from the developed resist profile. In ArF lithography process, development and rinse process is very critical because ArF resist is relatively hydrophobic compared to KrF resist. It causes heterogeneous interaction at interface of resist and aqueous solution (developer or deionized water). We imp… Show more

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Cited by 3 publications
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“…Another method for the line-width roughness measurement is top-down CD-SEM (Scanning Electron Microscope). 4 However, it will undesirably destroy what it measures when measuring multiple sites on a wafer. Also it is hard to take into account the sidewall variation along the height of the line structure.…”
Section: Introductionmentioning
confidence: 99%
“…Another method for the line-width roughness measurement is top-down CD-SEM (Scanning Electron Microscope). 4 However, it will undesirably destroy what it measures when measuring multiple sites on a wafer. Also it is hard to take into account the sidewall variation along the height of the line structure.…”
Section: Introductionmentioning
confidence: 99%