Origin of Low Channel Mobility and Threshold Voltage Instability of SiC-MOSFETs

Shiomi, Hiroya; Kitai, Hidenori; Tsujimura, Manabu; Kiuchi, Yuji; Nakata, D.; Ono, Shotaro; Kojima, K.; Fukuda, K.; Sakamoto, K.; Yamasaki, K.; Okumura, Hideyuki

doi:10.7567/ssdm.2015.j-6-4

Cited by 1 publication

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“…13) The high channel mobility in wet oxides was due to the low surface state density. 14) To improve channel mobility, relatively low interface state densities on 4H-SiC(0001) were obtained through careful adjustment of postoxidation nitridation or direct oxidation using a nitrogen-containing gas. [15][16][17][18][19] Further improvement by nitridation was reported for 4H-SiC (11 20) and (1 100) MOSFETs [20][21][22] and for 4H-SiC(0 33 8) MOSFETs.…”

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confidence: 99%

Development of a novel 1200-V-class 4H-SiC implantation-and-epitaxial trench MOSFET with low on-resistance

Shiomi¹,

Kitai²,

Tamaso³

et al. 2016

Jpn. J. Appl. Phys.

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In this paper, we present a newly developed 1200-V-class 4H-SiC implantation-and-epitaxial trench metal–oxide–semiconductor field-effect transistor (IETMOSFET). It uses high-quality p- and n-epitaxial layers for a channel and a trench current spreading layer (TCSL), respectively. It can enhance both channel mobility and bulk mobility for current spreading by avoiding damage and impurity variations caused by ion implantation. The ion implantation and epitaxial techniques developed for existing ion-implantation-and-epitaxial MOSFETs (IEMOSFETs) are herein utilized to protect the trench bottom and a relatively low-doped epitaxial channel layer with high mobility. By optimizing the geometry of p-base regions under a gate trench structure, we obtain a low specific on-resistance (R ON A) of 1.8 mΩ cm2 with a breakdown voltage (BVDSS) above 1200 V.

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