Origin of low threshold field emission from nitrogen-incorporated nanocrystalline diamond films

Ikeda, Tomohiro; Teii, Kungen

doi:10.1063/1.3115767

Cited by 54 publications

(38 citation statements)

References 17 publications

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“…, were therefore employed to characterize the atomic bonding and surface morphology of nitrogen‐doped conductive UNCD films before and after the ECTs. In the Raman spectra, the position and relative intensity of five Raman peaks, corresponding to trans‐polyacetylene (1141 and ∼1480 cm −1 ), D and G peaks of sp 2 ‐bonded carbon (1353 and 1547 cm −1 ) and sp 3 ‐bonded carbon (1332 cm −1 ), respectively , have no obvious change before and after the ECTs. By carefully comparing the SEM images in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…At the same time, the electrical conductivity of nitrogen‐doped UNCD films rapidly increases and tends to be saturated at about 100 Ω −1 cm −1 . The good conductivity of nitrogen‐doped UNCD films originates from the increasing sp 2 ‐bonded carbon in the grain boundaries .…”

Section: Introductionmentioning

confidence: 99%

“…At the same time, the electrical conductivity of nitrogen-doped UNCD films rapidly increases and tends to be saturated at about 100 V À1 cm À1 [15][16][17][18]. The good conductivity of nitrogendoped UNCD films originates from the increasing sp 2bonded carbon in the grain boundaries [19][20][21]. Even though there are some reports about benefit of ECT for BDD electrodes [1][2][3][4][5][6][7][8][9][10][11][12], this approach has not been applied for the hydrogenation of nitrogen-doped conductive UNCD films that have high volume content of grain boundaries and excellent conductivity.…”

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confidence: 99%

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Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

Xiong

Wang

Dai

et al. 2014

Phys. Status Solidi A

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The excellent conductivity of nitrogen-doped ultrananocrystalline diamond (UNCD) films mainly originates from sp 2 -bonded carbon located in the grain boundaries. But conventional hydrogen plasma treatment to achieve surface hydrogenation would preferentially etch sp 2 -bonded carbon and deteriorate the conductivity. In this article, an electrochemical cathodic treatment (ECT) was developed as an alternative method to hydrogenate the surface of nitrogen-doped conductive UNCD films. The treatment was done in acidic solution at À30 V for 10 min. X-ray photoelectron spectroscopy revealed that, after the ECT, the photoelectron subpeaks related to carbon-oxygen bonding significantly decreased and there was no obvious variation in the content of sp 2 -bonded carbon. Compared to pristine UNCD (P-UNCD) films, the hydrogenated UNCD (H-UNCD) films exhibited a marked change in electrochemical responses such as cyclic voltammetry, capacitance-voltage and electrochemical impedance spectroscopy, suggesting the different surface termination between two UNCD films. More importantly, Raman spectra, scanning electron microscopy and Hall-effect measurement, revealed that no obvious variations in atomic bonds and surface morphology as well as electrical properties existed before and after the ECT. All of these results demonstrated that ECT can be a non-destructive surface hydrogenation method for nitrogen-doped conductive UNCD films with a high content of sp 2 -bonded carbon atoms.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

Xiong

Wang

Dai

et al. 2014

Phys. Status Solidi A

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“…Here, we include only d.b., p, and p* states for simplification based on a simulation study. 5 The Fermi level position and the electron affinity for the NCD are based on our measurement by ultraviolet photoelectron spectroscopy, 18 while those for Si are taken from Ref. 15.…”

Section: Carrier Transport Mechanism In Ncd/si Heterojunctionsmentioning

confidence: 99%

Rectification properties of nanocrystalline diamond/silicon p-n heterojunction diodes

Teii

Ikeda

2013

Journal of Applied Physics

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Carrier transport mechanism in n-type nanocrystalline diamond (NCD)/p-type Si heterojunction diodes prepared by microwave plasma-enhanced chemical vapor deposition is studied in a temperature range of room temperature to 473 K. Current-voltage measurements show at most three orders of magnitude of rectification at ±20 V of biasing and room temperature, depending upon the deposition temperature. The current-voltage characteristics are described with the high ideality factor and the low current injection barrier due to the disordered NCD/Si heterojunction interface, mainly associated with grain boundaries in the NCD film. The Arrhenius plots of the currents reveal that the thermal excitation of carriers limits the conduction, and the apparent activation energy decreases drastically upon the bias voltage change from reverse to forward. The current injection mechanism at the interface is explained along the predicted energy-band diagrams, such that the major carriers from the defect states of the NCD are injected into the conduction band of the Si by forward biasing.

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“…In order to improve the FE characteristics of thin film cathodes, lots of methods have been proposed, e.g., the advanced materials [2] with low and even negative electron affinity or post-treatment [3] to reduce effective work function or improve field enhancement factor. On the other hand, it was found that quantum well states in two-layer ultrathin film cathodes can be considerably improve the FE properties [4], and the FE properties can be evidently affected by the potential well/barrier structure [5], which suggests an simple method to improve the FE characteristic by construct a quantum potential well/barrier structure and modulating the quantum structure of the thin films.…”

Section: Introductionmentioning

confidence: 99%

Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

Zhao

Wang

et al. 2010

2010 3rd International Nanoelectronics Conference (INEC)

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GaN/AlN two-layer films with different thickness are synthesized on Si substrates by pulsed laser deposition (PLD). GaN and AlN single-layer films are also synthesized for comparison. It is found that the turn-on field of the GaN/AlN twolayer films are considerably decreased 2 orders of magnitude than that of single-layer films. The improvement of FE characteristics an attributed to the quantum structure effects, which supplies a favorable location of electron emission and enhances tunneling ability. We show that by tuning the thickness of GaN/AlN, various FE characteristics can be obtained, which is induced by the modulation of quantum potential well/barrier structure. It indicates that an optimal thickness exists for GaN/AlN two-layer nano-films to give best field emission performance.

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Origin of low threshold field emission from nitrogen-incorporated nanocrystalline diamond films

Cited by 54 publications

References 17 publications

Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

Electrochemical cathodic treatment: A non-destructive way to hydrogenate conductive ultrananocrystalline diamond films

Rectification properties of nanocrystalline diamond/silicon p-n heterojunction diodes

Field emission from GaN/AlN nano-films on Si substrate prepared by pulsed laser deposition

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