Origin of luminescence quenching in structures containing CdSe/ZnSe quantum dots with a few 
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 ions

Oreszczuk, Kacper; Goryca, M.; Pacuski, W.; Smoleński, T.; Nawrocki, M.; Kossacki, P.

doi:10.1103/physrevb.96.205436

Cited by 12 publications

(10 citation statements)

References 55 publications

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“…Он объясняется существованием спиновых правил отбора для обменного механизма, из которых следует, что БПЭ ионам Mn 2+ , находящимся на нижнем, наиболее заселенном в магнитном поле спиновом подуровне, запрещена. Однако недавние исследования магнитофотолюминесценции одиночных CdSe/ZnSe КТ, содержащих несколько ионов Mn 2+ , указывают на то, что, наблюдаемый рост интенсивности может быть вызван и другими причинами, а его детали нуждаются в уточнении [4]. Возможно, при рассмотрении этого эффекта следует учитывать кинетику экситонов не только в КТ, но и в подложке, на которой они выращены.…”

Section: Introductionunclassified

“…Очевидно, что самым прямым доказательством доминирования обменного механизма является проверка выполнения правил отбора. До недавнего времени наиболее очевидным доказательством этого считался быстрый рост интенсивности ФЛ слоя CdMnSe/ZnSe КТ в поле B 0z, но, как сказано выше, недавние исследования указывают на то, что наблюдаемый рост интенсивности может иметь другие причины [4].…”

Section: Introductionunclassified

“…Таким образом, увеличивая заселенность высокоэнергетических спиновых уровней, можно контролировать скорость безызлучательной рекомбинации, поскольку, согласно правилам отбора для обменного механизма, рекомбинация с нижнего в магнитном поле спинового подуровня Mn S z = −5/2 для экситонов запрещена, тогда как она разрешена с участием возбужденных спиновых подуровней. Особый интерес могут представлять измерения ОДМР на одиночных КТ, содержащих один или несколько ионов Mn 2+[4]. Измерения ОДМР ионов Mn 2+ на ансамбле полумагнитных КТ были проведены в работе[6], где исследовались CdMnSe/ZnSe КТ.…”

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О Доминирующем Механизме Безызлучательного Возбуждения Ионов Марганца В II-VI Полумагнитных Полупроводниках

Черненко¹

2020

Физика И Техника Полупроводников

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Doping of group II-VI semiconductors and low-dimensional structures based on them with manganese leads to effective quenching of electro-and photoluminescence provided that the electron excitation energy of the crystal exceeds the energy of the intracenter transition of Mn2+ EMn и 2.1 eV. Quenching involves efficient energy transfer from the photoexcited crystal to Mn2 + ions. There are three possible mechanisms of this non-radiative energy transfer: dipole-dipole, exchange and related mechanism associated with sp-d mixing. Although the dipole-dipole mechanism is thought to be ineffective due to the forbidden intracenter transition in Mn2+, and the spin-dependent exchange mechanism is dominant, not all experimental facts accumulated to date supports this conclusion. The article discusses two experimental approaches to identify the dominant mechanism of energy transfer to Mn2 + ions and to evaluate the partial contributions of the mechanisms. One of these approaches is related to optically detectable magnetic resonance at single diluted magnetic semiconductor quantum dots (QD), the second - to plasmon amplification of energy transfer to Mn2 + ions by means of dipole-dipole interaction.

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Section: Introductionunclassified

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О Доминирующем Механизме Безызлучательного Возбуждения Ионов Марганца В II-VI Полумагнитных Полупроводниках

Черненко¹

2020

Физика И Техника Полупроводников

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“…Consequently, relative intensity of each of these lines constitutes a convenient measure of the orientation of the TM ion spin. This particular feature has been exploited in a number of studies concerning various types of dopants in different semiconductor systems [7,[9][10][11][12][13][14][15][16][17]. Such an approach is naturally limited to the case of the non-resonant excitation, since in the resonant case the directly excited state is vastly over-represented in the photoluminescence spectrum [18,19].…”

Section: Introductionmentioning

confidence: 99%

Readout of a dopant spin in the anisotropic quantum dot with a single magnetic ion

Rodek

Kazimierczuk

Bogucki

et al. 2019

J. Phys.: Condens. Matter

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Owing to exchange interaction between the exciton and magnetic ion, a quantum dot embedding a single magnetic ion is a great platform for optical control of individual spin. In particular, a quantum dot provides strong and sharp optical transitions, which give experimental access to spin states of an individual magnetic ion. We show, however, that physics of quantum dot excitons also complicate spin readout and optical spin manipulation in such a system. This is due to electron-hole exchange interaction in anisotropic quantum dots, which affects the polarization of the emission lines. One of the consequences is that the intensity of spectral lines in a single spectrum are not simply proportional to the population of various spin states of magnetic ion. In order to provide a solution of the above problem, we present a method of extracting both the spin polarisation degree of a neutral exciton and magnetic dopant inside a semiconductor quantum dot in an external magnetic field. Our approach is experimentally verified on a system of CdSe/ZnSe quantum dot containing a single Fe 2+ ion. Both the resonant and non-resonant excitation regimes are explored resulting in a record high optical orientation efficiency of dopant spin in the former case. The proposed solutions can be easily expanded to any other system of quantum dots containing magnetic dopants.

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“…Therefore, optical manipulation of a single magnetic ion spin is possible not only in classical systems with a single Mn 2+ ion in QDs with a relatively low energy gap, CdTe/ZnTe [2][3][4][5][6] and InAs/GaAs [7][8][9], but also in QDs with a higher-energy gap such as CdSe/ZnSe [1,[10][11][12] or in QD systems doped with impurities considered previously as killers of photoluminescence: Co 2+ [1], Fe 2+ [13,14], and Cr 2+ [15,16]. For all the systems studied so far it has been found that the ground state of the magnetic ion is significantly influenced by the local strain present in a quantum dot.…”

Section: Introductionmentioning

confidence: 99%

Direct determination of the zero-field splitting for a singleCo2+ion embedded in a CdTe/ZnTe quantum dot

et al. 2018

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When a Co2+ impurity is embedded in a semiconductor structure, crystal strain strongly influences the zero-field splitting between Co 2+ states with spin projection S z = ±3/2 and S z = ±1/2. Experimental evidence of this effect has been given in previous studies; however, direct measurement of the strain-induced zero-field splitting has been inaccessible so far. Here this splitting is determined thanks to magneto-optical studies of an individual Co 2+ ion in an epitaxial CdTe quantum dot in a ZnTe barrier. Using partially allowed optical transitions, we measure the strain-induced zero-field splitting of the Co 2+ ion directly in the excitonic photoluminescence spectrum. Moreover, by observation of anticrossing of S z = +3/2 and S z = −1/2 Co 2+ spin states in a magnetic field, we determine the axial and in-plane components of the crystal field acting on the Co 2+ . The proposed technique can be applied to optical determination of the zero-field splitting of other transition-metal ions in quantum dots.

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Origin of luminescence quenching in structures containing CdSe/ZnSe quantum dots with a few Mn2+ ions

Cited by 12 publications

References 55 publications

О Доминирующем Механизме Безызлучательного Возбуждения Ионов Марганца В II-VI Полумагнитных Полупроводниках

О Доминирующем Механизме Безызлучательного Возбуждения Ионов Марганца В II-VI Полумагнитных Полупроводниках

Readout of a dopant spin in the anisotropic quantum dot with a single magnetic ion

Direct determination of the zero-field splitting for a singleCo2+ion embedded in a CdTe/ZnTe quantum dot

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