2022
DOI: 10.1109/ted.2021.3139057
|View full text |Cite
|
Sign up to set email alerts
|

Origin of Negative Capacitance Transient in Ultrascaled Multidomain Metal-Ferroelectric-Metal Stack and Hysteresis-Free Landau Transistor

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2022
2022
2024
2024

Publication Types

Select...
3
2

Relationship

0
5

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 32 publications
0
1
0
Order By: Relevance
“…Due to the lack of a path to the substrate side when using Silicon on Insulator (SOI) wafers, several papers investigated to solve MOSFET difficulties such as parasitic capacitance and short channel effects will reduce the thermal conductivity of the structure [11][12][13][14][15][16]. Junctionless FETs (JL-FETs) are extensively doped devices with no difference in active region doping, as a result, the current flow mechanism differs from that of MOSFETs without junctions, and the fabrication procedure will be simple [17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%
“…Due to the lack of a path to the substrate side when using Silicon on Insulator (SOI) wafers, several papers investigated to solve MOSFET difficulties such as parasitic capacitance and short channel effects will reduce the thermal conductivity of the structure [11][12][13][14][15][16]. Junctionless FETs (JL-FETs) are extensively doped devices with no difference in active region doping, as a result, the current flow mechanism differs from that of MOSFETs without junctions, and the fabrication procedure will be simple [17][18][19][20][21][22][23][24][25][26][27][28][29][30].…”
Section: Introductionmentioning
confidence: 99%