2019
DOI: 10.1021/acsami.9b16394
|View full text |Cite
|
Sign up to set email alerts
|

Origin of Open-Circuit Voltage Losses in Perovskite Solar Cells Investigated by Surface Photovoltage Measurement

Abstract: Increasing the open circuit voltage (Voc) is one of the key strategies for further improvement of the efficiency of perovskite solar cells. It requires fundamental understanding of the complex optoelectronic processes related to charge carrier generation, transport, extraction and their loss mechanisms inside a device upon illumination. Herein we report the important origin of Voc losses in methylammonium lead iodide perovskite (MAPI) based solar cells, which results from undesirable positive charge (hole) acc… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

3
79
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 75 publications
(82 citation statements)
references
References 54 publications
3
79
0
Order By: Relevance
“…Photoemission spectroscopy typically generates non-equilibrium conditions with some degree of SPV and band flattening at semiconductor surfaces, on MHP surfaces in particular. [31][32][33] This circumstance places some uncertainty on the equilibrium surface position of E F measured via UPS. To sort out this issue in the present case, we performed KP-CPD/SPV measurements on all the films, in the dark and under controlled white light intensity.…”
Section: Understanding the Origin And Distribution Of Electronic Gap mentioning
confidence: 99%
“…Photoemission spectroscopy typically generates non-equilibrium conditions with some degree of SPV and band flattening at semiconductor surfaces, on MHP surfaces in particular. [31][32][33] This circumstance places some uncertainty on the equilibrium surface position of E F measured via UPS. To sort out this issue in the present case, we performed KP-CPD/SPV measurements on all the films, in the dark and under controlled white light intensity.…”
Section: Understanding the Origin And Distribution Of Electronic Gap mentioning
confidence: 99%
“…Therefore, the corresponding energy level schematic of the p-i-n planar PSCs is shown in Figure 1h. [29,31] The well-matched energy level between HTL and perovskite layer will reduce the carrier recombination at the interface and simultaneously suppress the energy loss of hole transport, [47,48] contributing to higher V OC and outstanding PSCs performance. [34,49] Then the surface properties of different HTLs are evaluated by measuring the contact angles of dimethyl sulfoxide (DMSO) droplets on PEDOT:PSS, SBS-3-PEDOT:PSS, SBS-9-PEDOT: PSS, and SBS-15-PEDOT:PSS films.…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the corresponding energy level schematic of the p‐i‐n planar PSCs is shown in Figure 1h. [ 29,31 ] The well‐matched energy level between HTL and perovskite layer will reduce the carrier recombination at the interface and simultaneously suppress the energy loss of hole transport, [ 47,48 ] contributing to higher V OC and outstanding PSCs performance. [ 34,49 ]…”
Section: Resultsmentioning
confidence: 99%
“…Hence, every factor involved to influencing the recombination will also have an effect on the V OC . Generally, larger energy gap between perovskite and charge transport layers results in higher V OC loss [ 25 ] and higher recombination rate in these devices.…”
Section: Resultsmentioning
confidence: 99%