2019
DOI: 10.1021/acsnano.9b08622
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Origin of the Flat Band in Heavily Cs-Doped Graphene

Abstract: A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work hi… Show more

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Cited by 32 publications
(28 citation statements)
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“…1h were taken). The Raman G band of Cs-doped bilayer graphene has a large downshift and a Fano asymmetric shape which arises from electron doping and is in agreement to previous works on monolayer graphene 15,16 . Performing a fit with one Fano line and one line for the feature at 1632 cm −1 that we identified already in the pristine bilayer samples (see Fig.…”
Section: Resultssupporting
confidence: 91%
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“…1h were taken). The Raman G band of Cs-doped bilayer graphene has a large downshift and a Fano asymmetric shape which arises from electron doping and is in agreement to previous works on monolayer graphene 15,16 . Performing a fit with one Fano line and one line for the feature at 1632 cm −1 that we identified already in the pristine bilayer samples (see Fig.…”
Section: Resultssupporting
confidence: 91%
“…Third, the zone folding of the band structure is caused by the Coulomb potential of the Cs 2 × 2 superstructure. The zone folding of the electronic structure of graphene is similar to what we have observed recently for Csfunctionalized monolayer graphene/Ir(111) 16 and what has been reported for oxygen intercalated graphene 48 . Zone folding causes the appearance of a new BZ with new high-symmetry points that are labeled by Γ 0 , K 0 , K 0 Ã , and M 0 that are indicated in Fig.…”
Section: Resultssupporting
confidence: 88%
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