Oscillations in spectral behavior of total losses (1 − R − T) in thin dielectric films

Amotchkina, Tatiana V.; Trubetskov, Michael K.; Tikhonravov, Alexander V.; Janicki, Vesna; Sancho‐Parramon, Jordi; Razskazovskaya, Olga; Pervak, Vladimir

doi:10.1364/oe.20.016129

Cited by 9 publications

(5 citation statements)

References 16 publications

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“…These reflected waves interfere with each other and lead to the observed interferences in light transmission. [47][48][49][50] As expected, the PaC/sAu had no detectable light transmittance across all wavelengths and PaC/PP showed consistently high transmittance. In comparison with the opaque metal, PaC alone exhibits strong absorption of UV light until 280 nm followed by a rapid increase reaching a mean of 80% transmittance at 352 nm.…”

Section: Electrical and Electrochemical Performance Of Lecogssupporting

confidence: 74%

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Validation of transparent and flexible neural implants for simultaneous electrophysiology, functional imaging, and optogenetics

Koschinski,

Lenyk,

Jung

et al. 2023

J. Mater. Chem. B

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Section: Electrical and Electrochemical Performance Of Lecogssupporting

confidence: 74%

“…These reflected waves interfere with each other and lead to the observed interferences in light transmission. 47–50…”

Section: Resultsmentioning

confidence: 99%

Validation of transparent and flexible neural implants for simultaneous electrophysiology, functional imaging, and optogenetics

Koschinski,

Lenyk,

Jung

et al. 2023

J. Mater. Chem. B

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“…Kim et al [ 18 ] reported similar observations on the decreasing transmittance of gas barrier films based on the increasing thickness of the films. The oscillations observed in the transmittance results are due to the waveguide of the thin film, which is dependent on the thickness of the films [ 21 ]. In contrast, the decreasing light transmittance within the visible range of the bilayers can be attributed to the thickness of the films.…”

Section: Resultsmentioning

confidence: 99%

The Effect of Reactive Sputtering on the Microstructure of Parylene-C

et al. 2022

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Sputtering technique involves the use of plasma that locally heats surfaces of substrates during the deposition of atoms or molecules. This modifies the microstructure by increasing crystallinity and the adhesive properties of the substrate. In this study, the effect of sputtering on the microstructure of parylene-C was investigated in an aluminum nitride (AlN)-rich plasma environment. The sputtering process was carried out for 30, 45, 90 and 120 min on a 5 μm thick parylene-C film. Topography and morphology analyses were conducted on the parylene-C/AlN bilayers. Based on the experimental data, the results showed that the crystallinity of parylene-C/AlN bilayers was increased after 30 min of sputtering and remained saturated for 120 min. A scratch-resistance test conducted on the bilayers depicted that a higher force is required to delaminate the bilayers on top of the substrate. Thus, the adhesion properties of parylene-C/AlN bilayers were improved on glass substrate by about 17% during the variation of sputtering time.

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“…The reflectance R and transmittance T spectra were measured using a spectrophotometer device (Lambda 950, PerkinElmer Inc., Waltham, MA, USA) from 190 to 1200 nm wavelength within a measurement accuracy of ±0.3%. The optical losses (OL) are calculated using the following expression [64][65][66]: OL = 1-T-R.…”

Section: Characterizations Of the Sio 2 :Hfo 2 Heterostructure Filmsmentioning

confidence: 99%

Heterostructure Films of SiO2 and HfO2 for High-Power Laser Optics Prepared by Plasma-Enhanced Atomic Layer Deposition

et al. 2023

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Absorption losses and laser-induced damage threshold (LIDT) are considered to be the major constraints for development of optical coatings for high-power laser optics. Such coatings require paramount properties, such as low losses due to optical absorption, high mechanical stability, and enhanced damage resistance, to withstand high-intensity laser pulses. In this work, heterostructures were developed by sub-nanometer thin films of SiO2 and HfO2 using the plasma-enhanced atomic layer deposition (PEALD) technique. Thin-film characterization techniques, such as spectroscopic ellipsometry, spectrophotometry, substrate curvature measurements, X-ray reflectivity, and Fourier transform infrared spectroscopy, were employed for extracting optical constants, residual stress, layer formation, and functional groups present in the heterostructures, respectively. These heterostructures demonstrate tunable refractive index, bandgap, and improved optical losses and LIDT properties. The films were incorporated into antireflection coatings (multilayer stacks and graded-index coatings) and the LIDT was determined at 355 nm wavelength by the R-on-1 method. Optical absorptions at the reported wavelengths were characterized using photothermal common-path interferometry and laser-induced deflection techniques.

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Oscillations in spectral behavior of total losses (1 − R − T) in thin dielectric films

Cited by 9 publications

References 16 publications

Validation of transparent and flexible neural implants for simultaneous electrophysiology, functional imaging, and optogenetics

Validation of transparent and flexible neural implants for simultaneous electrophysiology, functional imaging, and optogenetics

The Effect of Reactive Sputtering on the Microstructure of Parylene-C

Heterostructure Films of SiO2 and HfO2 for High-Power Laser Optics Prepared by Plasma-Enhanced Atomic Layer Deposition

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