Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

Harris, J. J.; Joyce, B.A.; Dobson, Peter J.

doi:10.1016/0039-6028(81)90091-1

Cited by 357 publications

(79 citation statements)

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“…Our results agree with, and may also provide a partial explanation for, the beneficial effects of Sn on III-V͑100͒ surfaces; [32][33][34][35] the deposition of an Sn prelayer in the epitaxial growth of GaAs effectively eliminates interfacial defects. 32 Furthermore, an Sn submonolayer has been found to act as a surfactant in GaAs epitaxial growth.…”

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confidence: 82%

“…33 Sn is also an n-type dopant of III-Vs, and Sn-terminated growth fronts have been found to affect bulk doping concentrations. 35 Recent studies 20,36 have elucidated the atomic structures of the ͑1 ϫ 2͒-Sn surfaces. , and Sn 4d photoemissions from InAs͑1 ϫ 2͒-Sn ͑a͒ before air exposure, ͑b͒ after air exposure, and ͓͑c͒ and ͑d͔͒ after heating of the air-exposed sample at 420°C and 450°C, respectively.…”

mentioning

confidence: 99%

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Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Laukkanen

Punkkinen

Lang

et al. 2011

Applied Physics Letters

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Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs͑100͒ and InAs͑100͒ surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized ͑1 ϫ 2͒ surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption. © 2011 American Institute of Physics. ͓doi:10.1063/1.3596702͔Amorphous ͑or polycrystalline͒ oxide layers are easily formed at the surfaces of III-V semiconductors exposed to oxygen. The formation of such structurally and electronically poor III-V oxide layers is detrimental for the development of many types of devices. Detrimental effects include surface Fermi-level pinning in the III-V channel of metal-oxidesemiconductor field-effect transistors ͑MOSFETs͒, increased surface recombination, barrier formation within metalsemiconductor contacts, and surface contamination affecting regrowth processes. The first example is probably the best known; the formation of amorphous surface oxides at the interface between a III-V semiconductor and an insulator causes the Fermi level to pin via defect states, thus rendering the development of III-V channels difficult for practical MOSFETs. A significant effort has therefore been made to understand how III-V oxides can be removed ͑or their formation prevented͒ during the fabrication of insulator-III-V junctions. 1-12 However, it is still unclear whether it is possible to avoid the oxygen reaction during interface growth, and there is still much room to improve insulator-III-V interfaces and our overall understanding of III-V oxidation. Simultaneously, an increasing number of studies 5,[13][14][15][16][17][18][19] has revealed the importance of atomic-scale information and of the processing of semiconductor surfaces, so-called surface engineering, for controlling the properties of the semiconductor interfaces. These studies have shown that a properly chosen thin adsorbate layer with a well-defined structure significantly improves the properties of oxide-semiconductor interfaces for various types of semiconductor devices.In this letter, we report an interesting effect of Sncapping on the desorption properties of amorphous oxides of GaAs͑100͒ and InAs͑100͒ surfaces. In particular, we have found that the initial Sn-stabilized ͑1 ϫ 2͒-ordered GaAs and InAs surfaces, comprising 0.5-1.0 monolayer ͑ML͒ of Sn, can be restored even after a week's exposure to air; in other words, the native surface oxides formed can be efficiently removed by heating the substrates in a vacuum. This property may be useful not only for the development of the longsought III-V MOSFETs but also for example for the development of Ohmic contacts and re-growth applications.Deposition of 0....

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mentioning

confidence: 99%

Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Laukkanen

Punkkinen

Lang

et al. 2011

Applied Physics Letters

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“…The spectra obtained inside and outside the same kinds of oval defects exhibited very different main emission lines; this result can be explained by an important variation of the Al/ Ga ratio at the center of the defects, which was confirmed by AES. 3 …”

Section: '2 Abruptness Of Heterointerfacesmentioning

confidence: 99%

Characterization of III-V Semiconductor Materials by Surface Sensitive Analytical Techniques A Review

Ogata

1990

ANAL. SCI.

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“…3 Even if the RHEED oscillations are not evaluated, the specular spot intensity varies depending on the growth conditions used and can be used to characterize MBE growth. 4 RHEED measurements on nonrotating substrates, apart from growth rate determination 6 and characterization of interfaces 7 using RHEED oscillations, also use the information contained in the geometry and shape of the diffraction streaks to assess the surface structure in MBE. 8 In this work, we examine ways of accessing this diffraction geometry information during substrate rotation.…”

Section: Introductionmentioning

confidence: 99%

Reflection high-energy electron diffraction during substrate rotation: A new dimension forin situcharacterization

Braun

Möller

Zhang

1998

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inReflection high-energy electron diffraction and scanning tunneling microscopy study of InP (001) We present two methods to access reciprocal space with reflection high-energy electron diffraction ͑RHEED͒ during substrate rotation. The extraction of an arbitrary number of still frames from a continuously changing RHEED pattern is realized by triggering the substrate rotation and it allows analysis of quasistatic RHEED patterns that are updated every revolution. At the same time, the intensity along a line parallel to the shadow edge can be used to reconstruct a planar cut through the reciprocal lattice similar to a low-energy electron diffraction pattern. This RHEED pattern directly reveals the symmetry of the surface reconstruction and its changes during the deposition process.

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Oscillations in the surface structure of Sn-doped GaAs during growth by MBE

Cited by 357 publications

References 3 publications

Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Ultrathin (1×2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides

Characterization of III-V Semiconductor Materials by Surface Sensitive Analytical Techniques A Review

Reflection high-energy electron diffraction during substrate rotation: A new dimension forin situcharacterization

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