Oscillator strength for intersubband transitions in strained<i>n</i>-type<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="italic">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi

Chun, Sang Kook; Wang, K. L.

doi:10.1103/physrevb.46.7682

Cited by 17 publications

(9 citation statements)

References 18 publications

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“…19 Sn 0.05 quantum cascade laser using intersubband transitions at L valleys of the conduction band which has a "clean" offset of 150 meV situated below other energy valleys ͑⌫ , X͒. The entire structure is strain-free because the lattice-matched Ge and Ge 0.76 Si 0.…”

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confidence: 99%

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Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Sun

Cheng

Menéndez

et al. 2007

Applied Physics Letters

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confidence: 99%

“…The entire structure is strain-free because the lattice-matched Ge and Ge 0.76 Si 0. 19 Sn 0.05 layers are to be grown on a relaxed Ge buffer layer on a Si substrate. Longer lifetimes due to the weaker scattering of nonpolar optical phonons reduce the threshold current and potentially lead to room temperature operation.…”

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confidence: 99%

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Sun

Cheng

Menéndez

et al. 2007

Applied Physics Letters

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“…where p is the momentum operator. 12 Using the aforementioned value of m zz and 1/m xz =1/͑3m t ͒ −1/͑3m l ͒ =1/͑0.26m 0 ͒, a non-negligible TEto-TM gain ratio g TE / g TM = ͑m zz / m xz ͒ 2 = 0.21 is obtained. 12,13 To model intravalley deformation-potential scattering, the following expressions can be used for the transition rates between subbands ͉i͘ and ͉f͘ due to emission ͑upper sign͒ and absorption ͑lower sign͒ of optical and acoustic phonons, respectively: 15…”

Section: ͑1͒mentioning

confidence: 99%

“…1, the constant-energy ellipsoids around the L-valley minima are tilted with respect to the ͑001͒ growth direction ͑z͒, giving rise to an inverse effective-mass tensor with both diagonal and off-diagonal nonzero terms. The relevant perpendicular effective mass is the diagonal term m zz , 12 which is related to the principal L-valley effective masses m l and m t according to 13 1/m zz =2/͑3m t ͒ +1/͑3m l ͒. Using m t = 0.08m 0 and m l = 1.59m 0 for Ge, 7 we obtain m zz = 0.12m 0 , which is about three times smaller than the mass of the heavy holes used in the SiGe ISB emitters of Refs.…”

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confidence: 99%

“…10 Furthermore, the nonzero off-diagonal terms 1 / m xz and 1 / m yz allow for coupling between the ISB electric dipoles ͑oriented along the growth axis͒ and in-plane polarized light. 12,13 As a result, unlike traditional III-V QC lasers based on ISB transitions in the ⌫ minimum, these QWs provide ISB gain not only for TM but also for TE light, which is desirable for the development of vertically emitting devices. Shown in Fig.…”

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Silicon-based injection lasers using electronic intersubband transitions in the L valleys

Driscoll

Paiella

2006

Applied Physics Letters

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The authors investigate the use of electronic intersubband transitions in Ge/ SiGe quantum wells on SiGe ͑001͒ virtual substrates for the development of silicon-based long-wavelength quantum cascade lasers. These heterostructures can provide relatively strong quantum confinement in the Ge L valleys particularly if the SiGe layers are sufficiently thin so that L-to-⌬ intervalley scattering paths are suppressed. Numerical simulations indicate that low-threshold operation can be obtained from these devices, thanks to the nonpolar nature of SiGe. Furthermore, the tensor properties of the L-valley effective mass are favorable for the development of vertical emitting intersubband lasers.

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Semiconductor Terahertz Technology

Guillermo¹,

García-Muñoz²,

Hartnagel³

et al. 2015

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Oscillator strength for intersubband transitions in strainedn-typeSixGe1

Cited by 17 publications

References 18 publications

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Silicon-based injection lasers using electronic intersubband transitions in the L valleys

Semiconductor Terahertz Technology

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