2013 Spanish Conference on Electron Devices 2013
DOI: 10.1109/cde.2013.6481339
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OTFT modeling: Development and implementation in EDA tools

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Cited by 4 publications
(4 citation statements)
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“…This model deploys the uniform model and parameter extraction method (UMEM) approach [22, 35–37, 40, 67, 68], and as Marinov's model, it also uses a power‐law relationship between the mobility and the gate overdrive voltage μEstrada=μ0Vaaγ)(falsefalse|VGSVtfalsefalse|γ A note to take is that in this model the mobility does not depend on the spatial distance as in Marinov's mobility. Also, each region of operation (off‐state, subthreshold, above‐threshold) has an independent equation, and then gathered by using an external transition expression.…”
Section: Reported Otft Compact Modelsmentioning
confidence: 99%
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“…This model deploys the uniform model and parameter extraction method (UMEM) approach [22, 35–37, 40, 67, 68], and as Marinov's model, it also uses a power‐law relationship between the mobility and the gate overdrive voltage μEstrada=μ0Vaaγ)(falsefalse|VGSVtfalsefalse|γ A note to take is that in this model the mobility does not depend on the spatial distance as in Marinov's mobility. Also, each region of operation (off‐state, subthreshold, above‐threshold) has an independent equation, and then gathered by using an external transition expression.…”
Section: Reported Otft Compact Modelsmentioning
confidence: 99%
“…Marinov et al in [27][28][29][30][31] have developed a compact generic analytical OTFT model that is based on charge drift in the presence of tail-distributed traps (TDTs) and variable-range hopping (VRH) [32][33][34]. Estrada et al in [22,[35][36][37][38][39][40] have proposed an OTFT compact model based on the unified model and parameter extraction method (UMEM) approach; another thing to mention is that its off-state, subthreshold, above-threshold equations are independent and afterwards merged into one equation using a mathematical transition function. The model developed by Li et al investigates the potential barrier between grains in a polycrystalline OSC layer.…”
Section: Introductionmentioning
confidence: 99%
“…The Verilog-A language is a high-level language that uses modules to describe the structure and behavior of analog systems and their components. With the analog statements of Verilog-A, you can describe a wide range of conservative systems and signal-flow systems, such as electrical, mechanical, fluid dynamic, and thermodynamic systems Verilog-AMS HDL lets designers of analog and mixed-signal systems and integrated circuits create and use modules which encapsulate high-level behavioral descriptions as well as structural descriptions of systems and components [6]. The behavior of each module can be described mathematically in terms of its ports and external parameters applied to the module.…”
Section: Otft Device Simulationmentioning
confidence: 99%
“…Multiple models have been presented in the organic and printed electronics field, due to their innovative nature and the use of novel materials, fabrication techniques and architectures [7]. Different models proposed in the literature present only Direct Current (DC) [8] behaviour while others DC and Alternating Current (AC) [9][10][11]. Only a few take into account parameter variability [12,13].…”
Section: Introductionmentioning
confidence: 99%