Output and Negative‐Region Characteristics in Organic Anti‐Ambipolar Transistors

Abstract

Characteristics of anti‐ambipolar transistors (AATs) are perfectly represented by a model of series transistors, and the transistor parameters are extracted from experimentally observed characteristics, where not only the transfer but also the output characteristics follow the square dependence derived from the saturated region. The consistency of the observed and calculated results demonstrates carriers are all recombined in the lateral p–n junction region. The transfer curve has a characteristic sharp peak, but when there is an overlapped region (Vthh > Vthe), the peak is rounded because both transistors are operated in the linear regions. In such a case, a nonzero current appears even at negative VD accompanied by a constant ID region at large negative VD. This study offers a quantitative analysis of organic AATs depending on the different operation regions.

Surface Potential Visualization in Organic Antiambipolar Transistors Using Operando Kelvin Probe Force Microscopy for Understanding the Comprehensive Carrier Transport Mechanism

“…In our previous study, we revealed that the Λ-shaped transfer curve of the AAT can be analyzed as the overlapped drain current in the saturation regions of the constituent transistors in the same analogy as that of the shoot-through current (STC) in complementary metal-oxide semiconductor (CMOS) inverters. [28][29][30]41] The I D -V G curve of the AAT is generally given by the following equations: [38][39][40]43] 2 ( )…”

“…[38] In contrast to these attempts for practical applications, the carrier transport mechanism of the AATs remains incompletely understood, although many experimental analyses and theoretical calculations have been implemented. [38][39][40][41][42] In our previous work, we tackled this issue using operando photoelectron emission spectroscopy (PEEM). [43] The PEEM measurements directly detected the conductive electrons in the lowest unoccupied molecular orbitals (LUMOs) of p-and n-type semiconductors in the AATs.…”

“…[34] Recently, organic AATs with various organic materials have been reported. [36][37][38] For instance, Yoo et al have reported organic AATs and their ternary inverters with dinaphtho[2,3-b:2′,3′-f ]thieno [3,2-b]thiophene (DNTT) and N,N′-ditridecyl-perylenediimide (PTCDI-C13) as p-and n-type organic semiconductors, respectively. [36] Furthermore, they demonstrated the transistor and logic operations on a flexible PEN substrate.…”

“…[37] Zhu et al have employed dibenzotetrathiafulvalene (DBTTF) and cyclohexyl-naphthalene-iimide (Cyh-NDI) as p-and n-type organic semiconductors, respectively, and obtained the organic AAT. [38] In contrast to these attempts for practical applications, the carrier transport mechanism of the AATs remains incompletely understood, although many experimental analyses and theoretical calculations have been implemented. [38][39][40][41][42] In our previous work, we tackled this issue using operando photoelectron emission spectroscopy (PEEM).…”

Reconfigurable Logic-in-Memory Constructed Using an Organic Antiambipolar Transistor

“…In this study, we demonstrate a new LIM device constructed using an organic antiambipolar transistor (OAAT), where two-input logic circuits and nonvolatile memory functions are unified in a device structure. An OAAT is a type of heterojunction transistor. − The transistor has at least a p–n junction in the transistor channel. This p–n junction induces a Λ-shaped transfer curve.…”