Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process

Li, Gen; Maekita, Kazuaki; Mitsuno, Hidefumi; Minamikawa, Takeo; Iiyama, Koichi

doi:10.7567/jjap.54.04dg06

Cited by 32 publications

(7 citation statements)

References 32 publications

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“…In this regards, Si is an excellent photodetector in the 850 nm band with higher responsivity than III-V photodetector. However, longer absorption length, RC time, and transit time in Si considerably limit bandwidth [9][10][11]. The bandwidth limitation of Si photodetector is significantly improved by realizing lateral pin photodetector in a guided wave configuration, particularly in a Silicon-on-Insulator (SOI) platform [12].…”

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confidence: 99%

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

et al. 2019

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We present waveguide integrated high-speed Si photodetector integrated with silicon nitride (SiN) waveguide on SOI platform for short reach data communication in 850 nm wavelength band. We demonstrate a waveguide couple Si pin photodetector responsivity of 0.44 A/W at 25 V bias. The frequency response of the photodetector is evaluated by coupling of a femtosecond laser source through SiN grating coupler of the integrated photodetector. We estimate a 3dB bandwidth of 14 GHz at 20 V bias, highest reported bandwidth for a waveguide integrated Si photodetector. We also present detailed optoelectronic DC and AC characterisation of the fabricated devices. The demonstrated integrated photodetector could enable an integrated solution for scaling of short reach data communication and connectivity.Ever increasing data traffic drives the need for scalable, high speed, and energy efficient connectivity in the datacenters [1-3]. Optical connectivity offers an excellent solution to data connectivity bottleneck in datacenters. Widely used 850 nm VCSEL based Multimode fiber (MMF) technology is reaching maximum capacity, however, proposal to extend the MMF toward Wavelength Division Multiplexing (WDM) would scale up the capacity to 400 Gbps. In view of that, IEEE proposed 400 Gbps roadmap [4] for short reach rack-to-rack communication by 2020. Adapting WDM would require integration of wavelength multiplexers and demultiplexers, light sources and detectors in a single module. Integrating all the functional elements as a single photonic integrated circuit would enable a compact, costeffective, and scalable platform. Fig. 1. Schematics of the proposed waveguide coupled Si photodetector. (a) SiN waveguide on SiO2, (b) Tapered Si waveguide vertically coupled to SiN, and (c) Si pin photodetector with SiN waveguide.It is essential that the circuit should be able to guide light with low-loss and is compact with the integration of light sources and detectors. Silicon (Si) photonics has demonstrated such a versatile platform in 1310 nm and 1550 nm wavelength band [5][6][7]. A similar strategy could enable a photonic circuit platform in 850 nm band as well. Recently, efforts are made to integrate III-V light sources and III-V/Graphene photodetectors on Silicon Nitride (SiN) waveguide platform [7,8]. However, such hybrid integration requires complex assembly and post-processing technology, also the fabrication is not compatible with preferred Si process technology. It is desirable to reduce such non-standard integration. In this regards, Si is an excellent photodetector in the 850 nm band with higher responsivity than III-V photodetector. However, longer absorption length, RC time, and transit time in Si considerably limit bandwidth [9][10][11]. The bandwidth limitation of Si photodetector is significantly improved by realizing lateral pin photodetector in a guided wave configuration, particularly in a Silicon-on-Insulator (SOI) platform [12]. The thin Si in SOI has smaller depletion capacitance, which enhances the RC time limited bandwidth....

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confidence: 99%

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

et al. 2019

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“…[ 19 ] Conventionally, lateral PIN photodiodes have low capacitance and are suitable for high‐speed applications. In 2015, Li et al [ 20 ] proposed a structure combining the advantages of SOI material and lateral PIN photodiode fabricated in a CMOS‐compatible process, see Figure a. The response time being limited by the transition of carriers and the depletion region capacitance, an optimum design of finger spacing for maximum bandwidth was demonstrated.…”

Section: The Pin Photodiode On Soimentioning

confidence: 99%

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Liu

Cristoloveanu

Wan

2021

Physica Status Solidi (a)

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The family of photodetectors plays an important role in multiple applications. Extensive research and continuous development of photodetectors has enriched their functionalities and improved their performances. The silicon-on-insulator (SOI) technology extends the concepts and merits of photodetectors. Herein, the recent progress of the SOI-based photodetectors is reviewed from the viewpoint of operation principles and performances. Silicon and Germanium photodiodes with conventional PIN structure are discussed first. Photodetectors with novel operating mechanism and high internal gain are then presented: avalanche photodiode on SOI, innovative photo-Z 2 -field effect transistor (FET), and devices based on interface coupling. Superior functionalities, such as wavelength detection, dynamically tunable responsivity and response spectrum, are demonstrated. At last, the technology of active pixel sensors on SOI is reviewed.

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“…Figure 1(a) shows the partially-depleted Z 2 -FET structure we use in our simulations, with T Si = 200 nm as in [15], [18] and a p-type doping concentration of 10 15 cm −3 . The front gate length is L G = 0.5 µm and intrinsic length (region not covered by front gate) is L IN = 1.5 µm.…”

Section: A Device Structure and Operating Principlementioning

confidence: 99%

“…Other applications, such as optical communication, image sensing, and photodetection are also widely explored in SOI because of high radiation hardness, as well as compatibility with SOI electronics and photonics [11]- [14]. Thus, photodetectors based on various operation mechanisms, using diodes, transistors and interface coupling effects (ICPDs) have been demonstrated in SOI technology [15]- [18].…”

Section: Introductionmentioning

confidence: 99%

Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection

Liu

Cao

et al. 2019

IEEE J. Electron Devices Soc.

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In this paper, the application of the zero subthreshold swing and zero impact ionization FET (Z 2 -FET) for photodetection is studied with TCAD simulation. Dynamic coupling effect is utilized to form carrier injection barriers in the partially depleted silicon-on-insulator (PD-SOI) film. Photoelectron accumulation at the front gate interface lowers the hole injection barrier and modulates the turn-on voltage. The light-triggering threshold of the device can be tuned by the front gate voltage, which controls the injection barrier height. We explore two operation modes suited to different applications, and demonstrate the operation of a one-transistor active pixel sensor array. Unlike other image sensors that utilize only one type of carrier, the Z 2 -FET photodetector uses photo-generated holes to induce high electron currents through internal amplification, leading to a high sensitivity of up to 1.8 × 10 5 e-/(lux•s).INDEX TERMS Z 2 -FET, dynamic coupling effect, silicon-on-insulator, photodetection.

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Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process

Cited by 32 publications

References 32 publications

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection

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Over 10 GHz lateral silicon photodetector fabricated on silicon-on-insulator substrate by CMOS-compatible process

Cited by 32 publications

References 32 publications

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

High-speed waveguide integrated silicon photodetector on a SiN-SOI platform for short reach datacom

A Review on the Recent Progress of Silicon‐on‐Insulator‐Based Photodetectors

Dynamic Coupling Effect in Z2-FET and Its Application for Photodetection

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Dynamic Coupling Effect in Z²-FET and Its Application for Photodetection