Over 20-GHz Cutoff Frequency Submicrometer-Gate Diamond MISFETs

Matsudaira, Hiromichi; Miyamoto, S.; Ishizaka, Hiroaki; Umezawa, Hamao; Kawarada, Hiroshi

doi:10.1109/led.2004.831200

Cited by 57 publications

(28 citation statements)

References 9 publications

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“…Figure 4 shows the maximum g m as a function of gate length (L g ) for the FET devices fabricated to date. The grey area and dotted area in the figure are a rough summary of the reported data about diamond (100) MESFETs and (100) MISFETs from a Cu-gate MESFET on single-crystalline diamond, 25 an Al gate MESFET on single-crystalline diamond, 7,26,27 a Cu/CaF 2 gate MISFET on singlecrystalline diamond, 8,19,20 and a Cu/CaF 2 gate MISFET on polycrystalline diamond. 28 The figure also shows a comparison between this study (MOSFET) and a Cu/CaF 2 gate MISFET on singlecrystalline (111) diamond.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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A H-terminated surface conductive layer of B-doped diamond on a (111) surface was used to fabricate a metal-oxide-semiconductor field-effect transistor (MOSFET) using an electron beam evaporated SiO 2 or Al 2 O 3 gate insulator and a Cu-metal stacked gate. When the bulk carrier concentration was approximately 10 15 /cm 3 and the B-doped diamond layer was 1.5 lm thick, the surface carrier mobility of the H-terminated surface on the (111) diamond before FET processing was 35 cm 2 /Vs and the surface carrier concentration was 1.5 9 10 13 /cm 2 . For the SiO 2 gate (0.76 lm long and 50 lm wide), the maximum measured drain current at a gate voltage of À3.0 V was À75 mA/mm and the maximum transconductance was 24 mS/mm, and for the Al 2 O 3 gate (0.64 lm long and 50 lm wide), these features were À86 mA/mm and 15 mS/ mm, respectively. These values are among the highest reported direct-current (DC) characteristics for a diamond homoepitaxial (111) MOSFET.

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Section: Resultsmentioning

confidence: 99%

“…7,8 Further detailed studies of (100) H-terminated devices were recently reported for a radiofrequency (RF) output power over 2 W/mm at 1 GHz, and for elevated temperature characteristics up to 100°C. [9][10][11][12] These investigations should provide some of the significant results for actual diamond applications in the near future.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Metal–Oxide–Diamond Field-Effect Transistors with Submicron-Sized Gate Length on Boron-Doped (111) H-Terminated Surfaces Using Electron Beam Evaporated SiO2 and Al2O3

Saito

Kim

Hirama

et al. 2011

Journal of Elec Materi

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“…Both p and n-type diamond films can be prepared by CVD, meaning that the desirable electronic properties exhibited by a few, very rare natural diamonds can now be achieved in an engineered diamond material [10][11][12]. The electrical properties of diamond and diamond-based devices have been widely published and different types of diamond devices have already been fabricated [13][14][15][16][17][18][19][20]. The combination of SiC and diamond is expected to lead to devices with improved thermal management and power capability.…”

Section: Introductionmentioning

confidence: 99%

Diamond / SiC heterojunctions

Mukherjee

Mendes

Alves

et al. 2016

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power. Diamond films deposited by Chemical Vapor Deposition (CVD) can be doped with boron, making them p-type semiconductors. Diamond films deposited on foreign substrates are intrinsically polycrystalline, so the quality of the interface, determined by deposition conditions and seeding method, plays a critical role in the heterojunction characteristics, impacting both reverse current and breakdown voltage. This work reports the fabrication and characterization of p-diamond / n-SiC heterojunctions. P-type polycrystalline diamond (PCD) films were deposited directly on the surface on n-type SiC commercial wafers by Hot Filament CVD (HFCVD) using different seeding techniques. I-V characteristics of the obtained heterojunctions were measured at room temperature and the quality and morphology of the diamond films were assessed by scanning electronic microscopy (SEM) and Raman spectroscopy. The influence of the different seeding techniques on the I-V characteristics is discussed.

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“…Metal semiconductor FETs (MESFETs) and metal insulator semiconductor FETs (MISFETs) on H-terminated surfaces on (100) substrates attained cut-off frequencies over 20 GHz with the gate length of 200 nm [12,13]. Again, most of the studies were dedicated to (100) single-crystal diamond.…”

Section: Introductionmentioning

confidence: 99%