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Metal-insulator-semiconductor field-effect transistors (MISFETs) with aluminum oxide as a gate insulator have been fabricated on a hydrogen-terminated diamond surface using its surface conductive layer. The aluminum oxide gate insulator was deposited on the diamond surface by the pulsed laser deposition method. The on-off ratio measured by dc was greater than five orders of magnitude, one of the best results reported for diamond FETs. The gate leak current of aluminum oxide MISFETs is three orders of magnitude less than that of conventional CaF2 MISFETs. These characteristics indicate that aluminum oxide gate insulators are suitable for high reliability power device applications of diamond MISFETs.

Photoneutron cross sections were measured for 58 Ni, 60 Ni, 61 Ni, and 64 Ni at energies between the one-neutron and two-neutron thresholds using quasi-monochromatic γ-ray beams produced in laser Compton-scattering at the NewSUBARU synchrotron radiation facility. The new photoneutron data are used to extract the γ-ray strength function above the neutron threshold complementing the information obtained by the Oslo method below the threshold. We discuss radiative neutron capture cross sections and the Maxwellian-averaged cross sections for Ni isotopes including 63 Ni, a branching point nucleus along the weak s-process path. The cross sections are calculated with the experimentally constrained γ-ray strength functions from the Hartree-Fock-Bogolyubov plus quasiparticle-random phase approximation based on the Gogny D1M interaction for both E1 and M 1 components and supplemented with the M 1 upbend.