Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 13 μm transmission

Tang, Yongqiang; Peters, Jonathan D.; Bowers, John E.

doi:10.1364/oe.20.011529

Cited by 130 publications

(61 citation statements)

References 19 publications

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“…Various mechanisms for achieving modulation in silicon have been investigated throughout the years. Excellent progress has been made in hybrid devices where other materials are incorporated with the SOI waveguides to achieve modulation, including group III-V materials [1], germanium [2][3][4][5][6], polymers [7,8] and graphene [9][10][11][12][13]. Furthermore the plasmonic based approach is also interesting area to achieve modulation [14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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Section: Introductionmentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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“…Alternative methods that can be extended beyond 2μm include III-V on silicon detectors [14], graphene on silicon [15], and defect based detectors [16], where the latter approaches have the advantage of CMOS compatibility. In terms of modulation, high speed optical modulators in the NIR have typically made use of the plasma dispersion effect [17], although approaches based upon the hybridisation of other materials such as III-V [18], germanium [19], graphene [20] and polymers [21] have also been successfully demonstrated. However, to date, little work has been done to achieve optical modulation in the 2-3μm band [9,22].…”

Section: Introductionmentioning

confidence: 99%

Optical detection and modulation at 2µm-25µm in silicon

et al. 2014

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Abstract:Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm. Kaertner, and T. M. Lyszczarz, "CMOS-compatible all-Si high-speed waveguide photodiodes with high responsivity in near-infrared communication band," IEEE Photon.

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“…At shorter wavelengths, the QW is absorbing even at 0 V bias, and the input light is partially absorbed in the adiabatic taper coupler before reaching the 100-m-long active section. Due to the bi-layer taper design adopted here, part of the coupler is unbiased [23], [26]. Thus, the generated carriers in this part cannot be swept out efficiently, which results in a decrease in the responsivity.…”

Section: Performance For Off-chip Interconnectmentioning

confidence: 99%

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

Wu¹,

Huang²,

Keyvaninia³

et al. 2016

Opt. Express

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A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 Â 0.65 mm 2 for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved.

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Over 67 GHz bandwidth hybrid silicon electroabsorption modulator with asymmetric segmented electrode for 13 μm transmission

Cited by 130 publications

References 19 publications

Recent breakthroughs in carrier depletion based silicon optical modulators

Recent breakthroughs in carrier depletion based silicon optical modulators

Optical detection and modulation at 2µm-25µm in silicon

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

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