Overcoming design challenges in low voltage GaN based PSFB battery charger

Hoffmann, Felix; Prasobhu, Pramod Kumar; Liserre, Marco; Buticchi, Giampaolo

doi:10.1109/iecon.2018.8591716

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…This will also appear on V d_Q5 when Q 5 turns off. The ringing frequency and overvoltage peak can be given by ( 13) and ( 14) [8]. It can be noticed that compared to Si devices, GaN devices have smaller C oss and faster di/dt, which lead to more frequent ringing and higher over-voltage peaks.…”

Section: Clamping Circuit Design For Reduced Ringingmentioning

confidence: 99%

“…Due to the benefits of zero-voltage switching (ZVS), phase shifted full bridge (PSFB) isolated converters are widely used in many modern industrial applications, such as renewable energy conversion [1], electric vehicle charging [2], [3], and telecommunication systems' power supply [4], [5]. PSFB converter has the benefits of wide gain range and fixed switching frequency over LLC resonant converter [6], has lower switch voltage rating compared to active clamp converter [7], and lower complexity than dual active bridge (DAB) converter [8], for unidirectional power flow.…”

Section: Introductionmentioning

confidence: 99%

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Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

2022

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This paper presents an improved circuit design of Gallium Nitride (GaN) based phase shifted full bridge (PSFB) converters along with a new adaptive burst mode control strategy, to achieve high efficiency over a wide power range, including light loads. The main challenges of PSFB converters addressed in this paper are: load-dependent zero-voltage switching (ZVS), transformer saturation, and secondary side ringing. Since switching losses of GaN FETs are dominant at light loads, adaptive burst mode control can be employed to improve the efficiency at lower output power. By periodically switching output current between 0 A and minimum ZVS current, adaptive burst mode control can enable both smaller effective switching frequency and lower switching losses. A correction factor 'k' is adopted in the adaptive burst mode control's current loop PI calculation so that the output current can switch fast without any overshoot that increases switches' current stress. To verify the effectiveness of the proposed circuit and controller design, a 375 V input, 70 V output, 800 W PSIM simulation model as well as experimental prototype are developed and tested. The experimental results demonstrate the practical benefits of the proposed adaptive burst mode control.INDEX TERMS Phase shifted full bridge (PSFB), zero-voltage switching (ZVS), burst mode control, Gallium Nitride (GaN) FETs, wide range efficiency improvement.

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Section: Clamping Circuit Design For Reduced Ringingmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Improved Circuit Design and Adaptive Burst Mode Control in PSFB Converters for Higher Efficiency Over a Wide Power Range

2022

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“…In Reference [29], the cross-side voltage ringing due to fast-switching GaN HEMTs in a GaN-based PSFB converter for battery charger applications was explored. It was suggested that increased transformer turn ratios can mitigate the overvoltage phenomena effectively and, thus, primary-side rms currents and the required voltage rating of the switching devices can be reduced.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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