Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

Zuliani, P.; Varesi, E.; Palumbo, E.; Borghi, Massimo; Tortorelli, I.; Erbetta, D.; Libera, G. Dalla; Pessina, Nicola; Gandolfo, A.; Prelini, Carlo; Ravazzi, L.; Annunziata, R.

doi:10.1109/ted.2013.2285403

Cited by 113 publications

(96 citation statements)

References 18 publications

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“…It is worth to highlight that the huge difference observed between the crystallization temperatures of D-alloy and T-alloy (250°C and 350°C respectively) is definitely reduced (about 20°C only) when the data retention is monitored on the electrically activated bit-cell. This must be attributed to local modifications induced on the active material by programming [19].…”

Section: Thermal Stabilitymentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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Section: Thermal Stabilitymentioning

confidence: 99%

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Zuliani

Palumbo

Borghi

et al. 2015

Solid-State Electronics

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“…In particular, high temperature embedded applications require the use of innovative alloy compositions with a higher crystallization temperature T x than GST 225. This is obtained either by doping with C and N or by increasing the Ge fraction, in the latter case with the drawback of a larger resistance drift [4].…”

Section: Introductionmentioning

confidence: 99%

Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films

Noé¹,

Sabbione²,

Castellani³

et al. 2015

J. Phys. D: Appl. Phys.

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Ageing of the amorphous phase of chalcogenide phase change materials is characterized by a large increase of their resistivity with time. This phenomenon, known as resistance drift and commonly attributed to structural relaxation, the nature of which remains unknown, has until now hindered the development of ultra-high multilevel storage devices. The origin of the resistance drift of amorphous GeTe thin films is studied here by resistivity measurements and grazing incidence x-ray absorption spectroscopy (GIXAS). The local order around Ge atoms is investigated at the Ge K-edge on a-GeTe samples previously set at different resistance drift levels by thermal annealing. In all samples, Ge-Ge and Ge-Te bonds coexist. This study demonstrates that the drift phenomenon is concomitant with structural changes linked to Ge-Ge homopolar bonds.

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“…Phase change memory (PCM) is one of the main emerging memory technology, featuring nanosecond phase switching [1], low programming power [2] and good reliability and scalability. PCM properties can be tailored by material and cell engineering thus allowing for multiple applications, such as stand-alone nonvolatile memory [3], storage class memory (SCM) [4] and embedded memories in microcontrollers and smart cards [5]. Embedded phase change memory (ePCM) can be scaled to future lithographic nodes and is compatible with high-k metal gate logic, given its integration in the back-end of the line (BEOL) technology.…”

Section: Introductionmentioning

confidence: 99%

Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe

Ciocchini

Palumbo

Borghi

et al. 2014

IEEE Trans. Electron Devices

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To satisfy the growing market demand for embedded non-volatile memory (eNVM), alternative solutions to Flash technology are currently under investigation. Among these, phase change memory (PCM) is attracting strong interest due to the low cost of integration with the CMOS front-end and good scalability. Embedded PCM (ePCM), however, must feature high reliability during both packaging and functional stages. This work studies reliability of PCM based on Ge-rich GeSbTe, providing evidence for resistance drift and decay in both the reset and set states. Set state instability is attributed to grain-boundary relaxation and grain growth. A unified model is presented, capable of predicting the reliability of set/reset states at elevated temperature.

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Overcoming Temperature Limitations in Phase Change Memories With Optimized ${\rm Ge}_{\rm x}{\rm Sb}_{\rm y}{\rm Te}_{\rm z}$

Cited by 113 publications

References 18 publications

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Engineering of chalcogenide materials for embedded applications of Phase Change Memory

Structural change with the resistance drift phenomenon in amorphous GeTe phase change materials’ thin films

Modeling Resistance Instabilities of Set and Reset States in Phase Change Memory With Ge-Rich GeSbTe

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