“…13,[24][25][26] In addition, silicon nanocone and nanopillar arrays in the silicon wafers have been generated by using ICP etching and extreme ultraviolet lithography. 10,[27][28][29] As one widely-used method for semiconductor processing, the ICP etching method has been applied, with several advantages, including low damage, high etching rates, high anisotropy, and high selection ratio. 30 The ICP method is a very complex physical and chemistry process, which is composed of two components: one is the interaction between the free radicals, metastable particles, and atoms by the inductively coupled grow discharge of etching gas; the other is the interaction between the active particles and the surface of a sample.…”