Overview and Evolution of Silicon Wafer Cleaning Technology ∗

Kern, Werner

doi:10.1016/b978-0-323-51084-4.00001-0

Cited by 84 publications

(85 citation statements)

References 105 publications

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“…Thus, the liquids contact only glass throughout the experiment. Well-established hot piranha glass cleaning procedures were employed [25]. No equivalent cleaning procedure is possible for the mylar, polycarbonate and stainless steel materials used as cell components in the previous studies [5].…”

mentioning

confidence: 99%

Nanoscale Structure of the Oil-Water Interface

et al. 2016

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X-ray reflectivity (XR) and atomistic molecular dynamics (MD) simulations, carried out to determine the structure of the oil-water interface, provide new insight into the simplest liquid-liquid interface. For several oils (hexane, dodecane, and hexadecane) the XR shows very good agreement with a monotonic interface-normal electron density profile (EDP) broadened only by capillary waves. Similar agreement is also found for an EDP including a sub-Å thick electron depletion layer separating the oil and the water. The XR and MD derived depletions are much smaller than reported for the interface between solid-supported hydrophobic monolayers and water.

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mentioning

confidence: 99%

Nanoscale Structure of the Oil-Water Interface

et al. 2016

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“…Substrates were cleaned ex situ using standard Si cleaning procedures for metals and organics used in complementary metal-oxide-semiconductor (CMOS) technology consisting of a piranha etch, hydrofluoric acid (HF) strip, and “standard clean-2” (SC2) 26 . The chips are capped with a thin protective oxide during the final SC2 cleaning step.…”

Section: Experimental Methodsmentioning

confidence: 99%

Temperature-dependent Si29 incorporation during deposition of highly enriched Si28 films

Dwyer

Kim

Simons

et al. 2017

Phys. Rev. Materials

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In this study, we examine the mechanisms leading to 29Si incorporation into highly enriched 28Si films deposited by hyperthermal ion beams at elevated temperatures in the dilute presence of natural abundance silane (SiH4) gas. Enriched 28Si is a critical material in the development of quantum information devices because 28Si is free of nuclear spins that cause decoherence in a quantum system. We deposit epitaxial thin films of 28Si enriched in situ beyond 99.99998 % 28Si onto Si(100) using an ion beam deposition system and seek to develop the ability to systematically vary the enrichment and measure the impact on quantum coherence. We use secondary ion mass spectrometry to measure the residual 29Si isotope fraction in enriched samples deposited from ≈ 250 °C up to 800 °C. The 29Si isotope fraction is found to increase from < 1 × 10−6 at the lower temperatures, up to > 4 × 10−6 at around 800 °C. From these data, we estimate the temperature dependence of the incorporation fraction, s, of SiH4, which increases sharply from about 2.9 × 10−4 at 500 °C to 2.3 × 10−2 at 800 °C. We determine an activation energy of 1.00(8) eV associated with the abrupt increase in incorporation and conclude that below 500 °C, a temperature independent mechanism such as activation from ion collisions with adsorbed SiH4 molecules is the primary incorporation mechanism. Direct incorporation from the adsorbed state is found to be minimal.

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“…Crystalline silicon solar cells have a very long development history and uninterrupted leading quality. Early stages of research on silicon made it a valuable asset for PV by different techniques such as standardized methods of feedstock purification, crystallization, junction formation, addition of contaminants of metal and its complexes, deactivation of its surface, wire sawing, and device characterization, bringing silicon to the industry from the laboratory. These technological enhancements have increased the efficiency of c‐Si cell by 25% and reduces their production costs .…”

Section: Solar Energymentioning

confidence: 99%

The progression of silicon technology acting as substratum for the betterment of future photovoltaics

Singh

Agrahari

2019

Int J Energy Res

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Summary To solve energy crisis, generation of clean and renewable energy sources are highly recommended. It not only solve energy‐related matters but also resolves environmental issues. A great number of renewable energy sources are present nowadays to resolve aforementioned issues, out of which photovoltaic modules is the preferable technology over others. Silicon is the native element to be used in photovoltaic module, due to its reasonable cost and band gap. The deciding parameters to harness solar energy to electricity rely upon solar irradiance and weather conditions. Here, we describe the rapid transformation of silicon as photovoltaic solar cell material that transfigured the photovoltaic industry. The photovoltaic industry initiated with monocrystalline silicon and multicrystalline silicon solar cell having conversion efficiency reached up to approximately 22.9% and 20.8%, respectively. The contemporary outburst for the trade of photovoltaic industry is due to the high manufacturing cost of silicon solar panels, which provided a chance for researchers to quest for advanced technology. It gave an opportunity for thin film solar cell to infiltrate in the market. This technology reduced the cost but on the expense of lower conversion efficiency.

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Overview and Evolution of Silicon Wafer Cleaning Technology ∗

Cited by 84 publications

References 105 publications

Nanoscale Structure of the Oil-Water Interface

Nanoscale Structure of the Oil-Water Interface

Temperature-dependent Si29 incorporation during deposition of highly enriched Si28 films

The progression of silicon technology acting as substratum for the betterment of future photovoltaics

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