The progression of silicon technology acting as substratum for the betterment of future photovoltaics

Abstract

Summary To solve energy crisis, generation of clean and renewable energy sources are highly recommended. It not only solve energy‐related matters but also resolves environmental issues. A great number of renewable energy sources are present nowadays to resolve aforementioned issues, out of which photovoltaic modules is the preferable technology over others. Silicon is the native element to be used in photovoltaic module, due to its reasonable cost and band gap. The deciding parameters to harness solar energy to electricity rely upon solar irradiance and weather conditions. Here, we describe the rapid transformation of silicon as photovoltaic solar cell material that transfigured the photovoltaic industry. The photovoltaic industry initiated with monocrystalline silicon and multicrystalline silicon solar cell having conversion efficiency reached up to approximately 22.9% and 20.8%, respectively. The contemporary outburst for the trade of photovoltaic industry is due to the high manufacturing cost of silicon solar panels, which provided a chance for researchers to quest for advanced technology. It gave an opportunity for thin film solar cell to infiltrate in the market. This technology reduced the cost but on the expense of lower conversion efficiency.

Review on mechanical behavior of solar cells for building integrated photovoltaics

“…Table 1 shows that the crystalline silicon system has the highest conversion efficiency and most stable operation condition [46], but its high material cost and complicated process lead to higher manufacturing costs and a longer energy recovery period [49]. However, this system is still the leading product in the market, with a global market share of 90% in 2012 [50], based on the maturity and indepth research of silicon-based solar products.…”

Effect of americium‐241 source activity on total conversion efficiency of diamond alpha‐voltaic battery

“…The degradation test of the diamond Schottky battery under the illumination of americium‐241 was performed in our previous study . Because of mature synthesis and processing technology, the conversion efficiency of silicon‐based photovoltaic devices can reach 26.7% . However, considering the theoretical conversion efficiency and radiation damage, we believe that diamond is more suitable as a material for nuclear batteries than silicon or other semiconductor materials with narrow bandgaps.…”

“…23 Because of mature synthesis and processing technology, the conversion efficiency of silicon-based photovoltaic devices can reach 26.7%. 24 However, considering the theoretical conversion efficiency and radiation damage, we believe that diamond is more suitable as a material for nuclear batteries than silicon or other semiconductor materials with narrow bandgaps. Various phosphor layers were loaded onto narrow bandgap GaAs photovoltaic devices to enhance the conversion efficiency of the nuclear battery, but the η total is still lower than 0.2%, indicating the weakness of the narrow bandgap semiconductor as nuclear battery material.…”

Effect of Covalent Surface Functionalization of Si on the Activity of Trifluoromethanesulfonic Anhydride for Suppressing Surface Recombination

“…Wet chemical functionalization is a useful approach to manipulate the physical and electronic properties of semiconductor interfaces. − Recently, a class of organic physisorbates has attracted notable attention for imparting ultralow rates of surface recombination on semiconductors relevant to photovoltaic and photoelectrochemical applications. − For example, crystalline silicon (Si) surfaces exhibited surface recombination velocities, S , less than 1 cm s –1 after exposure to bis­(trifluoromethane)­sulfonamide (TFSI), a known superacid. − The relevant properties for this reagent are not presently clear, although acidity is not essential in achieving low S values . A related physisorbate, trifluoromethanesulfonic anhydride (Tf 2 O), has no acidic proton and yet exhibits a comparable ability to suppress charge recombination on Si surfaces .…”