The present study, for the first time, reports the successful consolidation of chromium doped zinc sulfide (ZnS) polycrystalline infrared (IR) transparent ceramics (maximum transmittance of 67% at 11.6 μm) via hot pressing under vacuum. The phase composition of the as-sintered Cr 2+ :ZnS ceramics was determined to be primarily cubic ZnS sphalerite, with a minor amount of hexagonal ZnS wurtzite. Scanning electron microscopy (SEM) observation of the sintered ceramics showed a highly consolidated microstructure. IR absorption and photoluminescence measurements revealed that the Cr 2+ ions are tetrahedrally coordinated within the ZnS host lattice.
ZnSAs an extensively characterized II-VI wide bandgap semiconductor, zinc sulfide has been of significant interest for a long time due to its promising applications in various fields, including optical ceramics, phosphors, quantum dots, photocatalysts, and sensors [1][2][3][4]. When doped with transition metals and rare earth elements, ZnS can exhibit a wide range of luminescence behaviors in the visible and infrared regions [5][6][7][8][9]. In addition, due its exceptional performance as a material for room-temperature tunable solid state laser gain media in the mid-IR region, transition metal doped ZnS has inspired a tremendous amount of interest for researchers in past decades.In 1996, researchers at Lawrence Livermore National Laboratory demonstrated the potential of divalent transition metal doped zinc chalcogenides as materials for mid-IR laser applications © 2016. This manuscript version is made available under the Elsevier user license http://www.elsevier.com/open-access/userlicense/1.0/ [10]. Various divalent transition metals (Co 2+ , Ni 2+ , Fe 2+ and Cr 2+ ) were doped into ZnS/ZnSe/ZnTe hosts, and their room temperature mid-IR lasing performances were examined. It was determined that the tetrahedral substitution sites, rather than the octahedral sites, are more favorable doping sites for transition metals in the zinc chalcogenides. The tetrahedral coordination of dopants might contribute to the observed intense low-energy transitions, due to small crystal field splitting. Among the Zn chalcogenides, Cr 2+ doped ZnS/ZnSe showed exceptionally strong room-temperature absorption and emission in the mid-IR region. In addition, temperature-dependent lifetime measurements indicated that these materials revealed high (close to 80 and 100% for Cr:ZnS and Cr:ZnSe, respectively) luminescence quantum yield at room