2020
DOI: 10.1088/2053-1591/ab6382
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Oxidation and reduction processes in Ni/Cu/Cr/Si(100) thin films under low-energy ion irradiation

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Cited by 7 publications
(3 citation statements)
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“…The development of reduction processes at the internal interfaces is associated with the long-range effects induced by low-energy ions, which has been discussed in detail elsewhere [15]. Optimal ion treatment mode (energy of 800 eV and fluence of 5.6⋅10 16 ion/cm 2 ) caused a simultaneous passivation of all film layers with decreased presence of oxygen and carbon impurities. Since reduction processes yield first of all at the Cr/Si interface, it brings light on the change in destruction behaviour in this area.…”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…The development of reduction processes at the internal interfaces is associated with the long-range effects induced by low-energy ions, which has been discussed in detail elsewhere [15]. Optimal ion treatment mode (energy of 800 eV and fluence of 5.6⋅10 16 ion/cm 2 ) caused a simultaneous passivation of all film layers with decreased presence of oxygen and carbon impurities. Since reduction processes yield first of all at the Cr/Si interface, it brings light on the change in destruction behaviour in this area.…”
Section: Discussionmentioning
confidence: 99%
“…This can provide additional opportunities to improve the properties of the conductive layer after the deposition of the layered structures [16] and before the subsequent technological operations associated with thermal exposure.…”
Section: Introductionmentioning
confidence: 99%
“…Another implication of this simulation is the prediction of the surface roughness. It is well accepted that the oxidation of the metallic surface strongly depends on its morphology [40]. In turn, GR shows great potential for the corrosion resistance of metals (Me) [41].…”
Section: Discussionmentioning
confidence: 99%