Oxidation as A Means to Remove Surface Contaminants on Cu Foil Prior to Graphene Growth by Chemical Vapor Deposition

Pang, Jinbo; Bachmatiuk, Alicja; Fu, Lei; Yan, Chenglin; Zeng, Mengqi; Wang, Jiao; Trzebicka, Barbara; Gemming, Thomas; Eckert, J.; Rümmeli, Mark H.

doi:10.1021/acs.jpcc.5b03911

Cited by 58 publications

(37 citation statements)

References 42 publications

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“…Furthermore, it is worth noting that our BCG method allows the total elimination of the complicated surface pretreatment step conventionally required for graphene growth. [6a,c,9] Achieving a large‐area MLG‐free uniform SLG on Cu foil, without any prior surface treatment (chemical‐/electropolishing) is useful particularly for industrial applications.…”

Section: Resultsmentioning

confidence: 99%

“…Moreover, the existence of MLG patches persists in single crystal SLG growth, affecting the essence of this technique. [4c,5c] Various approaches have been adopted to restrict the presence of MLG patches, particularly by using the manipulating surface treatment, resolidifying and varying the composition of the Cu foil, and modifying the CVD process by introducing pulsed growth . However, these strategies have either been unsuccessful in completely limiting the MLG existence or have worked only within constrained growth conditions and have required extensive pretreatments.…”

Section: Introductionmentioning

confidence: 99%

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Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Abidi

Liu

Pan

et al. 2017

Adv Funct Materials

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A unique strategy is reported to constrain the nucleation centers for multilayer graphene (MLG) and, later, single‐crystal graphene domains by gettering carbon source on backside of the flat Cu foil, during chemical vapor deposition. Hitherto, for a flat Cu foil, the top‐surface‐based growth mechanism is emphasized, while overlooking the graphene on the backside. However, the systematic experimental findings indicate a strong correlation between the backside graphene and the nucleation centers on the top‐surface, governed by the carbon diffusion through the bulk Cu. This understanding steers to devise a strategy to mitigate the carbon diffusion to the top‐surface by using a carbon “getter” substrate, such as nickel, on the backside of the Cu foil. Depth profiling of the nickel substrate, along with the density functional theory calculations, verifies the gettering role of the nickel support. The implementation of the backside carbon gettering approach on single‐crystal graphene growth results in lowering the nucleation density by two orders of magnitude. This enables the single‐crystal domains to grow by 6 mm laterally on the untreated Cu foil. Finally, the growth of large‐area polycrystalline single layer graphene, free of unwanted MLG domains, with significantly improved field‐effect mobility of ≈6800 cm2 V−1 s−1 is demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Abidi

Liu

Pan

et al. 2017

Adv Funct Materials

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“…Epitaxy or surface‐mediated deposition techniques can be considered for phosphorene fabrication analogous to the synthesis routes of other 2D materials . These deposition techniques provide essential information about the growth rate such as monolayer coverage rate .…”

Section: Synthesis Methodsmentioning

confidence: 99%

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

Pang

Bachmatiuk

Yin

et al. 2017

Advanced Energy Materials

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448

253

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Black phosphorus was first synthesized by Bridgman in 1914 [1] but has been less intensively studied in the past century due The successful isolation of phosphorene (atomic layer thick black phosphorus) in 2014 has currently aroused the interest of 2D material researchers. In this review, first, the fundamentals of phosphorus allotropes, phosphorene, and black phosphorus, are briefly introduced, along with their structures, properties, and synthesis methods. Second, the readers are presented with an overview of their energy applications. Particularly in electrochemical energy storage, the large interlayer spacing (0.53 nm) in phosphorene allows the intercalation/deintercalation of larger ions as compared to its graphene counterpart. Therefore, phosphorene may possess greater potential for high electrochemical performance. In addition, the status of lithium ion batteries as well as secondary sodium ion batteries is reviewed. Next, each application for energy generation, conversion, and storage is described in detail with milestones as well as the challenges. These emerging applications include supercapacitors, photovoltaic devices, water splitting, photocatalytic hydrogenation, oxygen evolution, and thermoelectric generators. Finally the fast-growing dynamic field of phosphorene research is summarized and perspectives on future possibilities are presented calling on the efforts of chemists, physicists, and material scientists

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“…Generally, the quartz tube/carrier as a backside oxide support suppresses the nucleation of the back-side graphene, and promotes carbon diffusing to the top side, significantly inducing large BLG growth on the top side of the flat Cu foil. In addition, due to the oxidation of Cu foil during the heating by residual oxidative species in AP-CVD system [36][37][38], the oxygen released from copper oxides also participates in the synthetic processes and generates huge impacts on the graphene synthesis. Besides, the oxygen atoms in carbon source (acetone) are non-negligible, which might facilitate the crystallization of BLG [26,27].…”

Section: Resultsmentioning

confidence: 99%

High-quality bilayer graphene grown on softened copper foils by atmospheric pressure chemical vapor deposition

Qiao

Song

et al. 2020

Sci. China Mater.

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Bilayer graphene (BLG) shows great application prospect and potential in next-generation electronics because of its unique electrical and mechanical properties. However, the scalable synthesis of large-area high-quality BLG films is still a great challenge, despite the maturity of chemical vapor deposition (CVD) technique. In this study, we report a robust method to grow BLGs on flat, softened Cu foils by atmospheric pressure CVD. A moderate amount of residual oxygen accelerates the growth of BLG domains while suppressing the formation of multilayers. Raising the nucleation density at low hydrogen pressure efficiently increases the film continuity. Based on the optimized CVD process, the growth of graphene films on 4×4 cm 2 Cu foils with an average BLG coverage of 76% is achieved. The morphology and structure characterizations demonstrate a high quality of the BLG. Dual gate field-effect transistors are investigated based on AB-stacked BLG, with a tunable bandgap and high carrier mobility of up to 6790 cm 2 V −1 s −1 at room temperature.

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Oxidation as A Means to Remove Surface Contaminants on Cu Foil Prior to Graphene Growth by Chemical Vapor Deposition

Cited by 58 publications

References 42 publications

Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Regulating Top‐Surface Multilayer/Single‐Crystal Graphene Growth by “Gettering” Carbon Diffusion at Backside of the Copper Foil

Applications of Phosphorene and Black Phosphorus in Energy Conversion and Storage Devices

High-quality bilayer graphene grown on softened copper foils by atmospheric pressure chemical vapor deposition

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