Oxidation behavior of Al4SiC4 ceramic up to 1700°C

Microstructure, mechanical, thermal, and oxidation properties of a Zr2[Al(Si)]4C5–SiC composite prepared by in situ reaction/hot-pressing

“…The enhancement of oxidation resistance of the composite with respect to Zr 2 [Al(Si)] 4 C 5 can be ascribed to the formation of Si-containing oxides, such as aluminosilicate glass and mullite, in which the oxygen diffusive rate is very low. 37 In addition, the aluminosilicate glass can fill up pores and cracks during oxidation, 11,38 leading to the inhibition of further oxidation. This can be confirmed by the relatively smooth surface of the ZASC-SC composite after oxidation.…”

Oxidation of Zr2[Al(Si)]4C5 and Zr3[Al(Si)]4C6 in air

“…At 1200°C, the diffraction peaks for t-ZrO 2 become sharper, indicating the growth up of crystallite. Generally, SiO 2 and Al 2 O 3 can form aluminosilicate glass at relatively low temperatures, 10,11,17,18 which is probably responsible for the failed detection of Si-containing compounds by XRD. However, t-ZrO 2 is not the only polymorph for ZrO 2 and some diffraction peaks for m-ZrO 2 are also detected at this temperature.…”

“…[6][7][8][9][10] However, as a high-temperature structural material, the oxidation resistance of Zr 2 Al 3 C 4 ceramic at high temperature is still unsatisfactory. 11,12 Achievements in siliconized Zr 2 Al 3 C 4 and Al 4 SiC 4 imply that the oxidation resistance of Zr 2 Al 3 C 4 ceramic can possibly be improved by incorporating Si into the Zr-Al-C system. 9 Recently, we improved the high temperature oxidation resistance of Zr 2 Al 3 C 4 by silicon pack cementation.…”

Hexagonal Plate‐like Ternary Carbide Particulates Synthesized by a Carbothermal Reduction Process: Processing Parameters and Synthesis Mechanism

“…2,3 Aluminum-containing ternary ceramics are among the most promising candidates for high-temperature structural applications and have been applied as oxidation-protective coatings. 5,7,[10][11][12][13][14] Unlike SiC and Si 3 N 4 , the oxidation rate of Al 4 SiC 4 is not strongly affected by the addition of water vapor, owing to the formation of a dual oxide layer with mullite as the inner layer and alumina as the outer layer. [4][5][6] Recently, Al 4 SiC 4 has received strong attention because of the combination of its unique properties, such as low crystal density (3.03 g/cm 3 ), high melting temperature (420801C), high compressive strength (B260 GPa), and high toughness (3.9870.05 MPa Á m 1/2 ).…”