Oxidation Kinetics of Epitaxial (100) Copper Films at 25°C and 50°C

Abstract

Very-thin-film kinetics data are presented for oxide growth on parent epitaxially formed (100) copper crystals at 25 and 50 • C with different oxygen pressures in the range 0.01 torr to 170 torr. The results are interpreted in terms of the model based on electric-field driven ionic diffusion associated with the electrostatic-potential difference created by an electron-tunnelcurrent-virtual equilibrium.

Role of Stress in the Self-Limiting Oxidation of Copper Nanoparticles

“…We analyzed the plot of L versus t in view of basic rate laws for the oxidation kinetics, i.e., logarithmic, inverse-logarithmic, linear, parabolic, cubic, and higher power rate laws. At lower temperatures and in thin oxide films, the inverse-logarithmic equation based on the theory by Cabrera and Mott has often been employed to explain the oxidation kinetics of Cu bulk surfaces. − , But our data at both temperatures could not be fitted with this equation. The only equation that fit the data at 298 K was found to be direct-logarithmic, d L /d t = k exp(− L / L 0 ), where t is the exposure time at 9.3 × 10 4 Pa air pressure, k is the rate constant, and L 0 is constant.…”

Grain selective Cu oxidation and anomalous shift of graphene 2D Raman peak in the graphene–Cu system

“…It is well known that the oxidation rate of bare Cu depends on the crystal orientation of the exposed surface. The oxidation kinetics of different Cu surfaces has been subject of many studies over the last decades [18][19][20][21][22][23]; however, the oxidation process itself is influenced by a number of factors, such as the morphology and surface defects of the sample [22,24,25], its thermal history [10] or the oxidation temperature [18,25], which has led to apparent contradictory results. It is thus expected that both, the oxidation process of graphene covered Cu, and the interaction between graphene and the intercalated oxide layer, would depend on the exposed Cu surface.…”