1981
DOI: 10.1063/1.328659
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Oxidation kinetics of TiN thin films

Abstract: We have investigated the oxidation kinetics of TiN thin films in dry O2 in view of a possible application of TiN as material for gate electrodes and interconnections in large-scale integrated circuits. We found that in the temperature range of 500 to 650 °C the oxidation is thermally activated with an activation energy of 2.05±0.05 eV. Thereby the diffusion of oxygen through the oxide is the rate-limiting process. Analysis with x rays indicates that dry oxidation transforms TiN to the rutile form of TiO2. Film… Show more

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Cited by 283 publications
(88 citation statements)
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“…Note that annealing this HEN at 900 °C for 50 h only leads to an oxide layer 330 nm in thickness [29]. In contrast, TiN severely oxidizes at above 550 °C, while TiAlN starts rapid oxidation at above 800 °C [7,15]. The two advantages together lead to better cutting performances, particularly under harsh cutting conditions.…”
Section: Milling Testmentioning
confidence: 92%
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“…Note that annealing this HEN at 900 °C for 50 h only leads to an oxide layer 330 nm in thickness [29]. In contrast, TiN severely oxidizes at above 550 °C, while TiAlN starts rapid oxidation at above 800 °C [7,15]. The two advantages together lead to better cutting performances, particularly under harsh cutting conditions.…”
Section: Milling Testmentioning
confidence: 92%
“…Higher cutting speed, better machining quality, and longer tool life are thus accomplished by the usage of TiAlN coatings [13,16]. However, severe oxidation of TiAlN still takes place when temperature is higher than 800 °C [7,17]. Extended systems based on these coatings are thus developed and studied successively to meet the demands for higher temperature applications.…”
Section: Introductionmentioning
confidence: 99%
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“…In order to extend the high temperature applications of TiN coatings, ternary Ti-Me-N coating systems (where Me can be B, Al, Si, Cr, and others) have been actively explored and studied [35][36][37]. Among these, Ti-Al-N coating layer showed, in several studies, improved oxidation resistance compared to that of TiN coating layers due to the formation of a stable Al 2 O 3 surface film by migration of aluminium atoms of the coating itself to the surface region [37,38].…”
mentioning
confidence: 99%
“…However, the properties of TiN are strongly influenced by the film stoichiometry, crystallinity, morphology and hence the deposition method [83,93]. Sputtered TiN layers with 1:1 stoichiometry are known to oxidize significantly in dry ambient (O 2 ) above 500 ºC [94,95], non-stoichiometric TiN layers (Ti 1 N 1-x ) even at room temperature [96].…”
Section: Outlinementioning
confidence: 99%